WST3423
P-Ch MOSFET
Product Summery
General Description
The WST3423 is the highest performance trench
P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
BVDSS
RDSON
ID
-20V
100mΩ
-2.9A
Applications
The WST3423 meet the RoHS and Green
Product requirement with full function reliability
approved.
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z Load Switch
z Advanced high cell density Trench technology
SOT-23N Pin Configuration
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@Tc=25℃
ID@Tc=70℃
IDM
Rating
Units
Drain-Source Voltage
-20
V
Gate-Source Voltage
±12
V
1
-2.9
A
1
-1.9
A
-10
A
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
2
3
PD@TA=25℃
Total Power Dissipation
1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-ambient
RθJC
1
www.winsok.tw
Thermal Resistance Junction-Case
Page 1
1
Typ.
Max.
Unit
---
125
℃/W
---
80
℃/W
Dec.2014
WST3423
P-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-20
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.016
---
V/℃
VGS=-4.5V , ID=-2A
---
100
130
VGS=-2.5V , ID=-1A
---
145
170
185
220
-0.3
-0.5
-1
V
---
3.97
---
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
VGS=-1.8V , ID=-1.5A
VGS=VDS , ID =-250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-2A
---
5.9
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
13.1
26.2
Ω
Qg
Total Gate Charge (-4.5V)
---
5.6
7.8
---
0.72
1.0
Gate-Drain Charge
---
1.45
2.0
Turn-On Delay Time
---
4
8.0
Qgs
Qgd
Td(on)
VDS=-15V , VGS=-4.5V , ID=-2A
Gate-Source Charge
uA
nC
Rise Time
VDD=-15V , VGS=-4.5V , RG=3.3Ω
---
25.6
46
Turn-Off Delay Time
ID=-2A
---
26
52
Fall Time
---
12.4
24.8
Ciss
Input Capacitance
---
332
---
Coss
Output Capacitance
---
48
---
Crss
Reverse Transfer Capacitance
---
42
---
Min.
Typ.
Max.
Unit
---
---
-2.4
A
Tr
Td(off)
Tf
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
IS
Parameter
Conditions
1,4
Continuous Source Current
2,4
ISM
Pulsed Source Current
VSD
Diode Forward Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
IF=-2A , dI/dt=100A/µs , TJ=25℃
---
---
-10
A
---
---
-1.2
V
---
23
---
nS
---
4.7
---
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t
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