WST4040

WST4040 N-Ch MOSFET General Description Product Summery The WST4040 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . BVDSS RDSON ID 40V 35mΩ 5.8A Applications The WST4040 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved. z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOT-23-3L Pin Configuration Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ID@TC=25℃ ±20 V 1 5.8 A 1 A Continuous Drain Current, VGS @ 4.5V ID@TC=70℃ Continuous Drain Current, VGS @ 4.5V 2.5 IDM Pulsed Drain Current2 16 A 3 PD@TA=25℃ Total Power Dissipation 1.0 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.winsok.tw 1 Page 1 Typ. Max. Unit --- 125 ℃/W --- 75 ℃/W Dec.2014 WST4040 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current gf gfs Gate Resistance Qg Total Gate Charge (4.5V) --- 0.0 --- VGS=10V , ID=3A --- 35 50 VGS=4.5V , ID=2A --- 50 60 0.6 1.0 1.6 --- 4.5 --- VDS=32V , VGS=0V , TJ=25℃ ----- - 1 VDS=32V , VGS=0V , TJ=55℃ ----- - 5 VGS=±20V , VDS=0V ----- - ±100 nA VDS=5V , ID=3A --- 18 --- S VDS=0V , VGS=0V , f=1MHz --- 1.7 --- Ω --- 6.5 12.5 --- 0.8 3.5 Reference to 25℃ , ID=1mA VGS=VDS , ID =250uA orward Transconductance Rg 40 Typ. --- = VGS=0V , ID 250uA VDS=20V , VGS=4.5V , ID=2A Min. Max. V Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 1.65 4.2 Turn-On Delay Time ----- 1.5 4.8 Td(on) Unit V/℃ mΩ V mV/℃ uA nC Rise Time VDD=20V , VGS=10V , RG=3.3Ω --- 42 14 Turn-Off Delay Time ID=1A --- 18 44 Fall Time --- 5.9 8 Ciss Input Capacitance --- 396 --- Coss Output Capacitance --- 47 --- Crss Reverse Transfer Capacitance --- 35 --- Min. Typ. Max. Unit 9 --- --- mJ Min. Typ. Max. Unit --- --- 1 A --- --- 16 A Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Guaranteed Avalanche Characteristics Symbol EAS Parameter Conditions 5 Single Pulse Avalanche Energy VDD=25V , L=0.1mH , IAS=2A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current1,6 2,6 Pulsed Source Current 2 Conditions VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=2A , dI/dt=100A/µs , TJ=25℃ --- 18 --- nS Qrr Reverse Recovery Charge IF=2A , dI/dt=100A/µs , TJ=25℃ --- 70 --- nC Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper,t