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WST6004

WST6004

  • 厂商:

    WINSOK(微硕)

  • 封装:

    SOT-523-3

  • 描述:

    N-Channel Vdss=20V SOT-523

  • 数据手册
  • 价格&库存
WST6004 数据手册
WST6004 N-Ch MOSFET General Description Product Summery The WST6004 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. BVDSS RDSON ID 20V 140mΩ 0.6A Applications The WST6004 meet the RoHS and Green Product requirement with full function reliability approved.  Replace Digital Transistor  Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers Features SOT-523 Pin Configuration  High-speed switching D  Green Device Available 3 1 2 G S Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±8 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 600 mA ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 300 mA 3 A IDM Pulsed Drain Current 2 3 PD@TA=25℃ Total Power Dissipation 0.175 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA www.winsok.tw Parameter Thermal Resistance Junction-Ambient Page 1 1 Typ. Max. Unit --- 625 ℃/W Dec.2014 WST6004 N-Ch MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit 20 --- --- V --- 0.05 --- V/℃ --- 140 450 --- 180 765 0.35 --- 1.0 V --- -3.7 --- mV/℃ VDS=16V , VGS=0V , TJ=25℃ --- --- 1 VDS=16V , VGS=0V , TJ=55℃ --- --- 5 = VGS=0V , ID 250uA Reference to 25℃ , ID=1mA = VGS=4.5V , ID 0.6A = VGS=2.5V , ID 0.5A VGS=VDS , ID =250uA mΩ △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±10 uA gfs Forward Transconductance VDS=5V= , ID 0.1A --- 880 --- mS --- 6 --- --- 3.8 --- --- 28 --- Fall Time --- 18 --- Ciss Input Capacitance --- 130 --- Coss Output Capacitance --- 20 --- Crss Reverse Transfer Capacitance --- 16 --- Min. Typ. Max. Unit --- --- 100 mA --- --- 0.5 A --- --- 1 V Td(on) Tr Td(off) Tf Turn-On Delay Time VDD=15V , VGS=10V , Rise Time RG=3.3Ω, ID=0.1A Turn-Off Delay Time VDS=15V , VGS=0V , f=1MHz uA ns pF Diode Characteristics Symbol IS ISM VSD Parameter Conditions 1,4 Continuous Source Current 2,4 Pulsed Source Current 2 Diode Forward Voltage VG=VD=0V , Force Current VGS=0V , IS=0.2A , TJ=25℃ Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature. 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.winsok.tw Page 2 Dec.2014 WST6004 N-Ch MOSFET Typical Performance Characteristics Output Characteristics Transfer Characteristics 5.0 4.5 4.0 VGS=4V,5V Ta=25℃ VDS=3V VGS=3V 3.5 VGS=2.5V 3.0 Pulsed Pulsed 3.0 DRAIN CURRENT DRAIN CURRENT ID ID (A) 3.5 (A) 4.0 VGS=2V 2.5 2.0 1.5 Ta=100℃ 2.0 1.5 0.5 0.5 0.0 0.0 Ta=25℃ 1.0 VGS=1.5V 1.0 2.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE 4.0 VDS 4.5 0.0 5.0 0 (V) 1 2 3 GATE TO SOURCE VOLTAGE VGS 4 (V) RDS(ON) —— VGS RDS(ON) —— ID 500 800 Pulsed Ta=25℃ 700 350 (m) 400 VGS=2.5V 300 VGS=4.5V 500 250 200 0.1 ID=0.65A 600 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) VGS=1.8V RDS(ON) 450 Pulsed Ta=100℃ 400 300 Ta=25℃ 200 0.2 0.3 0.4 0.5 0.6 0.7 DRAIN CURRENT 0.8 ID 0.9 1.0 1.1 100 1.2 1 (A) 2 3 4 GATE TO SOURCE VOLTAGE GS 5 (V) Threshold Voltage IS —— VSD 2 0.8 Pulsed 1 VTH 0.1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 0.7 Ta=25℃ 0.6 ID=250uA 0.5 0.4 0.3 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTA VOLTAGE www.winsok.tw 1.2 SD 1.4 1.6 0.2 25 (V) 50 75 JUNCTION TEMPERATURE Page 3 100 Tj 125 (℃ ) Dec.2014 WST6004 N-Ch MOSFET 6273DFNDJH2XWOLQH'LPHQVLRQV Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1 Κ Dimensions In Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8° Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8° 627 6XJJHVWHG3DG/D\RXW  www.winsok.tw Page 4 Dec.2014 Attention 1,AnyandallWinsokpowerproductsdescribedorcontainedhereindonothavespecificationsthatcanhandle applicationsthatrequireextremelyhighlevelsofreliability,suchaslifeͲsupportsystems,aircraft'scontrolsystems,or otherapplicationswhosefailurecanbereasonablyexpectedtoresultinseriousphysicaland/ormaterialdamage.  ConsultwithyourWinsokpowerrepresentativenearestyoubeforeusinganyWinsokpowerproductsdescribedor containedhereininsuchapplications. 2,Winsokpowerassumesnoresponsibilityforequipmentfailuresthatresultfromusingproductsatvaluesthatexceed,  evenmomentarily,ratedvalues(suchasmaximumratings,operatingconditionranges,orotherparameters)listedin productsspecificationsofanyandallWinsokpowerproductsdescribedorcontainedherein. 3,SpecificationsofanyandallWinsokpowerproductsdescribedorcontainedhereinstipulatetheperformance, characteristics,andfunctionsofthedescribedproductsintheindependentstate,andarenotguaranteesofthe performance,characteristics,andfunctionsofthedescribedproductsasmountedinthecustomer’sproductsor equipment.Toverifysymptomsandstatesthatcannotbeevaluatedinanindependentdevice,thecustomershouldalways evaluateandtestdevicesmountedinthecustomer’sproductsorequipment. 4,WinsokpowerSemiconductorCO.,LTD.strivestosupplyhighͲqualityhighͲreliabilityproducts.However,anyandall semiconductorproductsfailwithsomeprobability.Itispossiblethattheseprobabilisticfailurescouldgiverisetoaccidents oreventsthatcouldendangerhumanlivesthatcouldgiverisetosmokeorfire,orthatcouldcausedamagetoother property.Whendesigningequipment,adoptsafetymeasuressothatthesekindsofaccidentsoreventscannotoccur.Such measuresincludebutarenotlimitedtoprotectivecircuitsanderrorpreventioncircuitsforsafedesign,redundantdesign, andstructuraldesign. 5,IntheeventthatanyorallWinsokpowerproducts(includingtechnicaldata,services)describedorcontainedhereinare controlledunderanyofapplicablelocalexportcontrollawsandregulations,suchproductsmustnotbeexportedwithout obtainingtheexportlicensefromtheauthoritiesconcernedinaccordancewiththeabovelaw. 6,Nopartofthispublicationmaybereproducedortransmittedinanyformorbyanymeans,electronicormechanical, includingphotocopyingandrecording,oranyinformationstorageorretrievalsystem,orotherwise,withouttheprior writtenpermissionofWinsokpowerSemiconductorCO.,LTD. 7,Information(includingcircuitdiagramsandcircuitparameters)hereinisforexampleonly;itisnotguaranteedfor volumeproduction. Winsokpowerbelievesinformationhereinisaccurateandreliable,butnoguaranteesaremadeor impliedregardingitsuseoranyinfringementsofintellectualpropertyrightsorotherrightsofthirdparties. 8,Anyandallinformationdescribedorcontainedhereinaresubjecttochangewithoutnoticeduetoproduct/technology improvement,etc.Whendesigningequipment,refertothe"DeliverySpecification"fortheWinsokpowerproductthatyou  Intendtouse. 9,thiscatalogprovidesinformationasofSep.2014. Specificationsandinformationhereinaresubjecttochangewithout notice.
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