WST6225
P-Ch MOSFET
Product Summery
General Description
TheWST6225 is the highest performance trench
P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
BVDSS
RDSON
ID
-20V
42mΩ
-5.1A
Applications
The WST6225 meet the RoHS and Green Product
requirement , with full function reliability approved.
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
Features
z Load Switch
z Advanced high cell density Trench technology
SOT-23-3L Pin Configuration
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=70℃
IDM
Rating
Units
Drain-Source Voltage
-20
V
Gate-Source Voltage
±12
V
1
-5.1
A
1
-3.9
A
-15
A
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
2
3
PD@TA=25℃
Total Power Dissipation
1
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
RθJA
Thermal Resistance Junction-Ambient
RθJC
1
www.winsok.tw
Thermal Resistance Junction-Case
Page 1
1
Typ.
Max.
Unit
---
125
℃/W
---
80
℃/W
Dec.2014
WST6225
P-Ch MOSFET
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
Min.
Typ.
Max.
Unit
VGS=0V , ID=-250uA
-20
---
---
V
Reference to 25℃ , ID=-1mA
---
-0.016
---
V/℃
VGS=-4.5V , ID=-3A
---
42
55
VGS=-2.5V , ID=-2A
---
56
70
VGS=-1.8V , ID=-1A
mΩ
---
73
85
-0.3
-0.5
-1.0
V
---
3.97
---
mV/℃
VDS=-16V , VGS=0V , TJ=25℃
---
---
-1
VDS=-16V , VGS=0V , TJ=55℃
---
---
-5
VGS=VDS , ID =-250uA
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±8V , VDS=0V
---
---
±100
nA
gfs
Forward Transconductance
VDS=-5V , ID=-3A
---
14
---
S
Qg
Total Gate Charge (-4.5V)
---
12.1
16.9
Qgs
Gate-Source Charge
---
1.5
2.1
Qgd
Gate-Drain Charge
---
3.1
4.3
8.8
Td(on)
VDS=-15V , VGS=-4.5V , ID=-3A
Turn-On Delay Time
uA
nC
---
4.4
Rise Time
VDD=-10V , VGS=-4.5V ,
---
45
81
Turn-Off Delay Time
RG=3.3Ω, ID=-3A
---
48.4
97
Fall Time
---
30.4
60.8
Ciss
Input Capacitance
---
938
---
Coss
Output Capacitance
---
108
---
Crss
Reverse Transfer Capacitance
---
96
---
Min.
Typ.
Max.
---
---
-4.8
A
---
---
-15
A
---
---
-1
V
---
28
---
nS
---
9
---
nC
Tr
Td(off)
Tf
VDS=-15V , VGS=0V , f=1MHz
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,4
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2,4
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25℃
IF=-3A , dI/dt=100A/µs , TJ=25℃
Unit
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The power dissipation is limited by 150℃ junction temperature
4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
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Page 1
Dec.2014
WST6225
P-Ch MOSFET
Typical Characteristics
100
25
-ID=3A
VGS=-5V
VGS=-4.5V
RDSON (mΩ)
-ID Drain Current (A)
20
VGS=-3V
15
VGS=-2.5V
10
80
60
VGS=-1.8V
5
40
0
0
1
2
-VDS , Drain-to-Source Voltage (V)
1
3
Fig.1 Typical Output Characteristics
2
3
-VGS (V)
4
5
Fig.2 On-Resistance vs. G-S Voltage
-IS Source Current(A)
4
3
TJ=150℃
TJ=25℃
2
1
0
0
0.2
0.4
0.6
0.8
1
-VDS , Drain-to-Source Voltage (V) Fig.3
Fig.4 Gate-Charge Characteristics
Forward Characteristics of Reverse
1.8
Normalized On Resistance
1.8
Normalized VGS(th)
1.4
1
0.6
0.2
1.4
1.0
0.6
0.2
-50
0
50
100
150
-50
50
100
150
Fig.6 Normalized RDSON vs. TJ
Fig.5 Normalized VGS(th) vs. TJ
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0
TJ , Junction Temperature (℃)
TJ ,Junction Temperature (℃ )
Page 1
Dec.2014
WST6225
P-Ch MOSFET
10000
100.00
10ms
-ID (A)
Capacitance (pF)
1000
100us
10.00
Ciss
1.00
100ms
Coss
100
1s
Crss
0.10
DC
TA=25℃
Single Pulse
F=1.0MHz
0.01
10
1
6
11
-VDS (V)
15
0.1
20
1
Fig.7 Capacitance
10
-VDS (V)
100
Fig.8 Safe Operating Area
Normalized Thermal Response (R θJA)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
PDM
0.001
TON
SINGLE PULSE
T
D = TON/T
TJpeak = TA + PDM x RθJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
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Fig.11 Gate Charge Waveform
Page 1
Dec.2014
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