HG9910M/TR

HG9910 UNIVERSAL HIGH BRIGHTNESS LED DRIVER FEATURES  Efficiency  Input voltage range  Withstanding input voltage surge  Output current range  String of LEDs  Constant-current LED driver  Linear and PWM dimming capability PIN CONFIGURATION >90% 10V to 600V up to 600V a few mA to more than 1A 1 pc to several hundreds APPLICATIONS  DC/DC or AC/DC LED driver  RGB backlighting LED driver  Backlighting of flat panel displays  General-purpose constant current source  Signage and decorative LED lighting  Automotive  Chargers 8-pin SO-8/DIP VIN 1 8 Rosc CS 2 7 CS GND 3 6 VDD Gate 4 5 PWM-D DESCRIPTION The HG9910 is a PWM high-efficiency LED driver control IC. It allows efficient operation of highbrightness (HB) LEDs from 10VDC up to 600VDC voltage sources. The circuit controls an external MOSFET at fixed switching frequencies up to 300 kHz. The frequency can be programmed by using a single resistor. The device peculiarity is that a LED string is driven at a constant current rather than at a constant voltage, thus providing a constant light output and an enhanced reliability. The output current can be programmed between a few milliamps and up to more than 1.0A. A rugged high-voltage junction isolated process was used and enabled the device to withstand an input voltage surge up to 600V. The output current to a LED string is programmable to any value between zero and its maximum value by applying an external control voltage to the linear dimming control input. To allow the device to accept an external control signal with a duty ratio of 0 to 100% and a frequency of up to a few kilohertz the circuit has a low-frequency PWM dimming input. TYPICAL APPLICATION CIRCUIT CIN VIN VDD HG9910 CDD http://www.hgsemi.com.cn 1 2018 AUG HG9910 ABSOLUTE MAXIMUM RATINGS VIN to GND CS, LD, PWM_D, GATE to GND Continuous power dissipation (TA = +25°C) (Note 1) 8-pin DIP (derate 9 mW/°C above +25°C) 8-pin SO-8 (derate 6.3 mW/°C above +25°C) Operating temperature range Junction temperature Storage temperature range -0.5V to +600V -0.3V to VDD+0.3V 900mW 630mW -40°C to +85°C +125°C -65°C to +150°C Stresses beyond those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = +25°C unless noted otherwise) DESCRIPTION MIN TYP MAX UNITS CONDITIONS VINDC IINSD VDD SYMBOL Input DC supply voltage range Shut-down mode supply current Internally regulated voltage 10.0 0.5 7.0 7.5 600 1 8.0 V mA V ΔVDD, load VDD load regulation 0 - 100 mV DC input voltage Pin PWM_D to GND, VIN = 8V VIN = 10V to 600V, IDD(ext) = 0, pin GATE is open IDD(ext) = 0 to 1.0mA, 500pF at GATE; ROSC = 226kOhm, PWM_D = VDD VDD,max Maximal pin VDD voltage 10.0 V IDD(ext) VDD current available for external circuitry VDD undervoltage lockout threshold VDD undervoltage lockout hysteresis Pin PWM_D input low voltage Pin PWM_D input high voltage Pin PWM_D pull-down resistance Accuracy of Current Sense threshold voltage at wafer testing Current sense pull-in threshold voltage GATE high output voltage GATE low output voltage Oscillator frequency 0.7 mA 0.91* VDD % Rising VIN mV Falling VIN 1 UVLO ΔUVLO VEN(lo) VEN(hi) REN dVCS VCS(hi) VGATE(hi) VGATE(lo) fOSC DMAX hf TBLANK tDELAY Maximum oscillator PWM duty cycle Pin LD (linear dimming) voltage range Current sense blanking interval Delay from CS to GATE lo tRISE tFALL GATE output rise time GATE output fall time VLD 0.87* VDD 0.89* VDD 500 0.8 When an external voltage is applied to pin VDD VIN = 10V to 100V 2.0 50 100 150 V V kOhm -2.4% 0 2.4% % 238 250 262 mV TA = -40°C to +85°C VDD 0.3 30 120 100% V V kHz 250 mV IOUT = 10mA IOUT = -10mA ROSC = 1.00MOhm ROSC = 226kOhm FPWM hf = 25kHz, at GATE, CS to GND TA =