LM1875T

LM1875 20W AUDIO POWER AMPLIFIER DESCRIPTION The HG LM1875 is a monolithic power amplifier offering very low distortion and high quality performance for consumer audio applications. The HG LM1875 delivers 20 wants into a 4 Ω or 8Ω load on +25V supplies.Using an 8 Ω load and +30V supplies,over 30 watts of power may be delivered.The amplifier is designed to operate with a minimum ofexternal components.Device overload protection consists of both internal current limit and thernal shutdown. The HG LM1875 design takes advantage of advanced circuit techniques and processing to achieve extremely low distortion levels even at high output power levels.Other outstanding features include high gain,fast slew rate and a wide power bandwidth,large output voltage swing,high current capability,and a very wide supply range.The amplifier is internally compensated and stable for gains of 10 or greater. 1 TO-220B 1 TO-220-5 1: +IN 4: Output FEATURES *2: -IN 5: Vcc 3: -VEE *Up to 30 watts output power *Avo typically 90 dB *Low distortion: 0.015%,1kHz,20W *Wide power bandwidth: 70kHz *Protection for AC and DC short circuits to ground *Themal protection with parole circuit *High current capability: 4A *Wide supply range 16V-60V *Internal output protection diodes *94 dB ripple rejection APPLICATIONS *High performance audio systems *Bridge amplifiers *Stereo phonographs *Servo amplifiers *Instrument systems http://www.hgsemi.com.cn 1 2016 JAN LM1875 TYPICAL APPLICATIONS +Vcc + C3 0.1μF 4Ω~8Ω C1 2.2μF 1 VIN 5 + R2 22k R1 1M C7 100μF 4 LM1875 2 _ R5 1 3 -VEE C4 0.1μF R4 20k C6 + 100μF C5 0.22μF R3 1K + C2 22μF ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage Input Voltage Storage Temperature Junction Temperature Lead Temperature(Soldering,10 seconds) SYMBOL RATING UNIT Vs VIN Tstg TJ TL 60 -VEE ~ Vcc -65 ~ +150 150 260 V V ℃ ℃ ℃ SYMBOL RATING UNIT θJC θJA 3 73 ℃/W ℃/W THERMAL DATA DESCRIPTION Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient ELECTRICAL CHARACTERISTICS Vcc=+25V,-VEE=-25V,TAMBIENT=25℃,RL=8Ω,Av=20(26dB),fo=1kHz,unless otherwise specified. SYMBOL TEST CONDITIONS Supply Current Output Power(Note 1) Total Harmonic Distortion (Note 1) PARAMETER Vs Po THD POUT=0W THD=1% POUT=20W,fo=1kHz POUT =20W, fo =20kHz POUT =20W,RL=4Ω,fo=1kHz POUT =20W,RL=4Ω,fo=20kHz Offset Voltage Vos http://www.hgsemi.com.cn 2 MIN TYP MAX UNIT 70 25 0.015 0.05 0.022 0.07 ±1 100 mA W 0.4 0.6 ±15 % mV 2016 JAN LM1875 PARAMETER SYMBOL Input Bias current Input Offset Current Gain-Bandwidth Product Open Loop Gain Power Supply Rejection Ratio Iib IIO GBW Gv PSRR CONDITIONS MIN Fo=20kHz DC Vcc,1kHz,1 Vrms VEE,1kHz,1 Vrms 20W,8Ω,70kHz BW TYP MAX UNIT ±0.2 0 5.5 90 95 83 8 4 3 ±2 ±0.5 µA µA MHz dB 52 52 dB Max Slew Rate SR V/µs ILIM Current Limit VOUT=VSUPPLY – 10V 3 A Rs=600Ω,CCIR Equivalent Input Noise en µVrms Voltage Note 1: Assumes the use of a heat sink having a thermal resistance of 1℃/W and no insulator with an ambient temperature of 25℃.Because the output limiting circuitry has a negative temperature coefficient,the maximum output power delivered to a 4Ωload may be slightly reduced when the tab temperature exceeds 55℃. TYPICAL APPLICATIONS(CONTINUED) R2 +Vcc C4 0.1μF 22k R1 22k + C2 10μF C1 1.0μF VIN R4 1M C7 + 100μF R3 22k 1 + LM1875 2 _ C3 R5 10μF 10k + http://www.hgsemi.com.cn 5 4 R7 1 C5 0.22μF 3 C6 2200μF + 4Ω~ 8Ω R6 200k 3 2016 JAN LM1875 TYPICAL PERFORMANCE CHARACTERISTICS THD vs Power Output THD vs Supply Voltage 0.1 Vs=+25V 0.09 PD=10W 0.08 0.07 THD(%) TOTAL HARMONIC DISTORTION(%) 1.0 0.1 0.06 0.05 0.04 RL=4Ω 0.03 RL=8Ω 0.02 0.01 0.01 0 0.1 1.0 10 20 100 50 100 200 500 1K 2K 5K 10K 20K FREQUENCY(Hz) POWER OUTPUT(W) Power Output vs Supply Voltage 35 100 SUPPLY CURRENT(mA) 30 POWE OUTPUT(W) Supply Current vs Supply Voltage RL=8Ω THD=1% 25 20 15 10 5 80 60 40 20 0 0 5 10 20 25 15 SUPPLY VOLTAGE(+V) 0 30 90 40 80 POSITIVE SUPPLY 70 35 DEVICE DISSIP ATION(W) PSRR(dB) 45 NEGATIVE SUPPLY 50 40 20 10 0 20 10 15 20 25 30 Device Dissipation vs Ambient Temperature PSRR vs Frequency 30 5 SUPPLY VOLTAGE(±V) 100 60 0 INPUT REFERRED RS=0 RL=4 1 Vrms INFINITE HEAT SINK 30 1℃/W HEAT SINK 25 20 5℃/W HEAT SINK 15 10 5 50 100 200 500 1K 2K 5K10K 20K 0 FREQUENCY(Hz) 2℃/W HEAT SINK 10℃/W HEAT SINK 0 20 40 60 80 100 120 140 160 TA - AMBIENT TEMPERATURE(℃) INTERFACE=1℃/W See Application Hints. http://www.hgsemi.com.cn 4 2016 JAN LM1875 Power Disipation vs Power Output Power Disipation vs Power Output 50 40 35 30 Vs=+25V 25 20 Vs=+20V 15 10 Vs=+15V RL=4Ω fo=1kHz 5 0 0 5 RL=8Ω fo=1kHz 45 POWER DISSIPATION(W) 45 20 25 10 15 POW ER OUTPUT(W ) 40 35 30 Vs=+30V 25 Vs=+25V 20 15 Vs=+20V 10 Vs=+15V 5 0 0 30 5 15 20 25 30 Open Loop Gain and Phase vs Frequency IOUT vs VOUT-Current Limit/ Safe Operating Area Boundary 6 30 25 4 2 GAIN(dB) OUTPUT CURRENT(A) 10 POW ER OUTPUT(W ) 0 -2 -4 20 180 15 135 10 90 5 45 0 0 -5 -45 -10 -90 -135 -15 -6 -25 -20 -15 -10 -5 5 0 -20 100k 10 15 20 25 OUTPUT VOLTAGE(V) OHASE LAG(DEGREES) POWER DISSIPATION(W) 50 Vs=+30V 1M FREQUENCY(Hz) -180 10M Input Bias Current vs Supply Volage 300 INPUT BIAS CURRENT(nA) T A=70℃ 250 T A= 200 T A=0℃ 25℃ 150 100 * Thermal shutdown with infinite heat sink **Thermal shutdown with 1℃/ W heat sink 0 0 5 http://www.hgsemi.com.cn 10 15 20 25 SUPPLY VOLTAGE(+V) 30 5 2016 JAN Vin Cin 2.2μ http://www.hgsemi.com.cn 6 V- 3 2 Rin 22k 1 Q47 Q48 Q3 4p C3 V+ Q7 5 R4 6.8k Q4 R2 3.3k Q1 R5 6.2k Q9 R3 3.3k Q8 Q5 R1 1.2k R7 15k R6 50k 4p C1 Q6 Q29 R18 2.7k Q2 Q10 Q11 R14 395 R9 4.9k Z1 R13 1k Q19 C2 4p Q14 1 3 Q12 R12 450 R11 820 R10 3.6k R8 1.7k Q20 R15 3.3k Q17 Q13 R17 910 Q40 Q15 R15 6k2 Q18 Q31 Z3 Z2 R23 20k Q32 R24 80k R27 450 R25 1.2k Q30 R21 30 R26 40k Q21 R19 5k Q41 Q22 R20 370 R28 150 S Q33 3x 3x Q42 S Q25 R29 3k Q28 10X R33 26 Q24 R22 30 1 R30 200 1 2 S Q36 S Q37 3x 3x 3x Q26 Q46 S Q27 10X S Q44 11 R40 40 R34 75 40X Q38 R37 400 R31 75 S Q34 40X R39 510 Z7 Z6 R41 20k R36 510 Z5 3X R35B 20 R35A 20 R32B 20 R32A 20 3X S Q45 3X Q43 3X Z4 R38 20k R35 0.25 S Q39 500X 4 R32 0.25 S Q35 500X C1 22μ R11 1k R12 20k Load Rc 1 Cc 220n Vout LM1875 2016 JAN