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LMV932M/TR

LMV932M/TR

  • 厂商:

    HGSEMI(华冠)

  • 封装:

    SOP8_150MIL

  • 描述:

    1MHz带宽低功率运算放大器

  • 数据手册
  • 价格&库存
LMV932M/TR 数据手册
LMV932 1 MHz Bandwidth Low Power Op Amp Features Description • • • • • • 1 MHz Gain Bandwidth Product (typ.) Rail-to-Rail Input/Output Supply Voltage: 1.8V to 5.5V Supply Current: IQ = 100 µA (typ.) 90° Phase Margin (typ.) Temperature Range: - Industrial: -40°C to +85°C - Extended: -40°C to +125°C • Available in Single, Dual and Quad Packages LMV932 operational amplifiers (op amps) is specifically designed for general-purpose applications. This family has a 1 MHz gain bandwidth product and 90° phase margin (typ.). It also maintains 45° phase margin (typ.) with 500 pF capacitive load. This family operates from a single supply voltage as low as 1.8V, while drawing 100 µA (typ.) quiescent current. Additionally, the LM932 supports rail-to-rail input and output swing with a common mode input voltage range of VDD + 300 mV to V SS - 300 mV. This family of operational amplifiers is designed with Microchip’s advanced CMOS process. Applications The LMV932 family is available in the industrial and extended temperature ranges. It also has a power supply range of 1.8V to 5.5V. • • • • • • Automotive Portable Equipment Photodiode Pre-amps Analog Filters Notebooks and PDAs Battery-Powered Systems Package Types LMV932 Typical Application PDIP, SOIC, MSOP VDD VIN VOUTA 1 VINA– 2 + VINA+ 3 VOUT LMV932 - VSS 4 8 VDD A - + 7 VOUTB B + - 6 V 5 V VSS R1 R2 VREF R1 Gain = 1 + -----R2 Non-Inverting Amplifier 1 2016 APR LMV932 1.0 ELECTRICAL CHARACTERISTICS PIN FUNCTION TABLE Name Absolute Maximum Ratings † VDD - VSS .........................................................................7.0V All Inputs and Outputs ...................... VSS -0.3V to V DD +0.3V Difference Input Voltage ....................................... |VDD - VSS| Output Short Circuit Current ..................................continuous Current at Input Pins ....................................................±2 mA Current at Output and Supply Pins ............................±30 mA Function V INA+, VINB Non-inverting Inputs V INA–, VINB Inverting Inputs VDD Positive Power Supply VSS Negative Power Supply V OUTA, V OUTB Outputs Storage Temperature ....................................-65°C to +150°C Maximum Junction Temperature (TJ) .......................... +150°C ESD Protection On All Pins (HBM;MM) ............... ≥ 4 kV; 200V † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. DC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD /2, RL = 10 kΩ to VDD /2, and VOUT ~ V DD/2. Parameters Sym Min Typ Max Units VOS -7.0 — +7.0 mV ∆VOS/∆TA — ±2.0 — µV/°C PSRR — 86 — dB Conditions Input Offset Input Offset Voltage Input Offset Drift with Temperature Power Supply Rejection VCM = VSS TA= -40°C to +125°C, VCM = VSS VCM = VSS Input Bias Current and Impedance Input Bias Current: IB — ±1.0 — pA Industrial Temperature IB — 19 — pA TA = +85°C Extended Temperature IB — 1100 — pA TA = +125°C Input Offset Current IOS — ±1.0 — pA Common Mode Input Impedance ZCM — 1013||6 — Ω||pF Differential Input Impedance ZDIFF — 1013||3 — Ω||pF Common Mode Input Range V CMR VSS − 0.3 — VDD + 0.3 V Common Mode Rejection Ratio CMRR 60 76 — dB VCM = -0.3V to 5.3V, VDD = 5V AOL 88 112 — dB VOUT = 0.3V to VDD - 0.3V, VCM = VSS VOL, VOH VSS + 25 — V DD − 25 mV VDD = 5.5V ISC — ±6 — mA VDD = 1.8V — ±23 — mA VDD = 5.5V VDD 1.8 — 5.5 V IQ 50 100 170 µA Common Mode Open-Loop Gain DC Open-Loop Gain (large signal) Output Maximum Output Voltage Swing Output Short-Circuit Current Power Supply Supply Voltage Quiescent Current per Amplifier http://www.hgsemi.com.cn 2 IO = 0, VDD = 5.5V, VCM = 5V 2016 APR LMV932 AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to 5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL = 10 kΩ to VDD/2, and CL = 60 pF. Parameters Sym Min Typ Max Units GBWP — 1.0 — MHz Conditions AC Response Gain Bandwidth Product Phase Margin PM — 90 — ° Slew Rate SR — 0.6 — V/µs G = +1 Input Noise Voltage Eni — 6.1 — µVp-p Input Noise Voltage Density eni — 28 — nV/√Hz f = 1 kHz Input Noise Current Density ini — 0.6 — fA/√Hz f = 1 kHz Noise http://www.hgsemi.com.cn 3 f = 0.1 Hz to 10 Hz 2016 APR LMV932 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL = 10 kΩ to VDD/2, and CL = 60 pF. 100 1225 Samples VCM = VSS 20% 18% PSRR, CMRR (dB) 16% 14% 12% 10% 8% 6% 90 PSRR (VCM = VSS) 80 CMRR (VCM = -0.3V to +5.3V) 4% 2% 70 7 6 5 4 -50 -25 0 Input Offset Voltage (mV) Input Offset Voltage 100 FIGURE 2-4: Temperature. VCM = VSS Open Loop Gain (dB) PSRR- 70 PSRR+ CMRR 40 -30 80 -60 Phase 60 -90 40 -120 20 30 1.E+04 -20 0.1 1.E+05 10k 1.E-01 100k 1.E+00 1.E+01 1 10 Frequency (Hz) 2% 55% 50% 45% 40% 35% 605 Samples V DD = 5.5 V V CM = VDD TA = +125°C 30% 25% 20% 15% 10% 5% 0% 30 28 26 24 22 20 18 16 14 12 10 8 6 0 0% 4 1.E+07 Input Bias Current (pA) Input Bias Current at +85°C 1500 4% 2 -210 10M 1400 6% 0 1.E+06 1M 1300 8% http://www.hgsemi.com.cn 1.E+05 100k 1200 1230 Samples V DD = 5.5 V V CM = VDD TA = +85°C FIGURE 2-3: Histogram. 1.E+04 10k Open-Loop Gain, Phase vs. 300 10% FIGURE 2-5: Frequency. 200 12% PSRR, CMRR vs. Percentage of Occurrences Percentage of Occurrences 14% 1.E+03 1k Frequency (Hz) 100 FIGURE 2-2: Frequency. 1.E+02 100 1100 1.E+03 1k 900 1.E+02 100 -180 VCM = VSS 1000 1.E+01 10 -150 Gain 0 20 125 100 800 50 100 0 700 60 75 120 600 PSRR, CMRR (dB) 90 80 50 CMRR, PSRR vs. Ambient 500 FIGURE 2-1: Histogram. 25 Ambient Temperature (°C) Open Loop Phase (°) 3 2 1 0 -1 -2 -3 -4 -5 -6 -7 0% 400 Percentage of Occurrences 22% Input Bias Current (pA) FIGURE 2-6: Histogram. 4 Input Bias Current at +125°C 2016 APR LMV932 Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL = 10 kΩ to VDD/2, and CL = 60 pF. 18% Percentage of Occurrences 100 2% Frequency (Hz) FIGURE 2-7: vs. Frequency. FIGURE 2-10: Histogram. Input Noise Voltage Density Input Offset Voltage (µV) Input Offset Voltage (µV) 12 Input Offset Voltage Drift 200 VDD = 1.8V -200 -300 -400 TA = -40°C TA = +25°C TA = +85°C TA = +125°C -500 -600 150 100 50 VDD = 5.5V 0 VDD = 1.8V -50 -100 -150 V CM = VSS -200 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -0.2 -0.4 -700 0.0 0.5 1.0 1.5 Common Mode Input Voltage (V) FIGURE 2-11: Output Voltage. Output Short Circuit Current (mA) VDD = 5.5V -100 -200 -300 TA = -40°C TA = +25°C TA = +85°C TA = +125°C -400 -500 -600 -700 -0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Input Offset Voltage vs. 35 30 +ISC, V DD = 5.5V 25 20 -ISC, V DD = 5.5V 15 -ISC, VDD = 1.8V 10 5 +ISC, VDD = 1.8V 0 -50 Common Mode Input Voltage (V) -25 0 25 50 75 100 125 Ambient Temperature (°C) FIGURE 2-9: Input Offset Voltage vs. Common Mode Input Voltage at VDD = 5.5V. http://www.hgsemi.com.cn 2.0 Output Voltage (V) FIGURE 2-8: Input Offset Voltage vs. Common Mode Input Voltage at VDD = 1.8V. Input Offset Voltage (µV) 8 Input Offset Voltage Drift (µV/°C) 0 -100 0 10 1.E+05 100k 6 1.E+04 10k 4 0% 1.E+03 1k 2 1.E+02 100 4% 0 10 6% -2 1.E+01 1 8% -4 1.E+00 10% -6 1.E-01 0.1 12% -8 10 f = 0.1 to 10 Hz 14% -10 Eni = 6.1 µVP-P, 1225 Samples VCM = VSS TA = -40°C to +125°C 16% -12 Input Noise Voltage Density (nV/—Hz) 1,000 FIGURE 2-12: Output Short-Circuit Current vs. Ambient Temperature. 5 2016 APR LMV932 Note: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2, RL = 10 kΩ to VDD/2, and CL = 60 pF. 1.0 0.08 0.8 Output Voltage (20 mV/div) Slew Rate (V/µs) G = +1 V/V Falling Edge, VDD = 5.5V Falling Edge, VDD = 1.8V 0.9 0.7 0.6 0.5 Rising Edge, VDD = 5.5V Rising Edge, VDD = 1.8V 0.4 0.3 0.2 0.1 0.0 -50 -25 0 25 50 75 100 0.02 0.00 -0. 02 -0. 04 -0. 06 -0. 08 0.E+00 Slew Rate vs. Ambient 1.E-06 2.E-06 3.E-06 4.E-06 1,000 6.E-06 7.E-06 8.E-06 VDD - V OH VOL - VSS 10 1.E-05 G = +1 V/V V DD = 5.0V 4.5 100 9.E-06 Small Signal Non-Inverting 5.0 4.0 3.5 3.0 2.5 2.0 1.5 1.0 1 10µ 1.E-05 1.E-04 1.E-03 100µ 1m 0.5 1.E-02 10m 0.0 0.E+00 1.E-05 2.E-05 3.E-05 4.E-05 Output Current Magnitude (A) 5.E-05 6.E-05 7.E-05 8.E-05 9.E-05 1.E-04 Time (10 µs/div) FIGURE 2-14: Output Voltage Headroom vs. Output Current Magnitude. FIGURE 2-17: Pulse Response. Large Signal Non-Inverting 160 10 TA = +125°C 140 VDD = 5.5V Quiescent Current per amplifier (mA) Output Voltage Swing (VP-P) 5.E-06 Time (1 µs/div) FIGURE 2-16: Pulse Response. Output Voltage (V) Output Voltage Headroom (mV) 0.04 125 Ambient Temperature (°C) FIGURE 2-13: Temperature. 0.06 VDD = 1.8V 1 120 TA = 85°C 100 TA = 25°C 80 TA = -40°C 60 40 20 0.1 1.E+03 1k 1.E+04 1.E+05 10k 100k 0.0 1M Frequency (Hz) FIGURE 2-15: Frequency. Output Voltage Swing vs. http://www.hgsemi.com.cn VCM = VDD - 0.5V 0 1.E+06 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 Power Supply Voltage (V) FIGURE 2-18: Quiescent Current vs. Power Supply Voltage. 6 2016 APR
LMV932M/TR 价格&库存

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LMV932M/TR
    •  国内价格
    • 1+2.48400
    • 10+2.00880
    • 30+1.80360
    • 100+1.54440
    • 500+1.27440
    • 1000+1.20960

    库存:1016

    LMV932M/TR
    •  国内价格
    • 1+1.52249
    • 30+1.46999
    • 100+1.36499
    • 500+1.26000
    • 1000+1.20750

    库存:0