SS26 (SMAF)

SS22B-SS220B 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA Features








For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC / 10 seconds at terminals 0.180(4.57) 0.160(4.06) 0.086(2.20) 0.077(1.95) 0.209(5.30) 0.201(5.10) 0.012(0.30) 0.006(0.15) 0.096(2.44) 0.084(2.13) Mechanical Data



0.155(3.94) 0.130(3.30) 0.059(1.50) 0.035(0.90) Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Weight: 0.093gram 0.008(0.20) 0.002(0.05) Dimensions in inches and(millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SS SS SS SS Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) IF= 2.0A @ 25oC o @ 100 C o @ TA =25 C at Maximum DC Reverse Current o Rated DC Blocking Voltage @ TA=125 C Typical Junction Capacitance (Note 3) Typical Thermal Resistance ( Note 2 ) Operating Temperature Range VRRM VRMS VDC SS SS SS SS SS Units 22B 23B 24B 25B 26B 29B 210B 215B 220B 20 30 40 50 60 90 100 150 220 V 14 21 28 35 42 63 70 105 125 V 20 30 40 50 60 V 90 100 150 220 I(AV) 2.0 A IFSM 50 A 0.4 IR 10 Cj R θJL R θJA TJ 0.85 0.95 0.70 0.80 0.1 5.0 130 17 75 -65 to +125 Storage Temperature Range Notes: 0.70 0.65 0.5 0.4 VF -65 to +150 -65 to +150 TSTG 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.4” x 0.4”(10mm x 10mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. V mA mA pF o C/W o C C o - 40 ht t p : // Revision:20170701-P1 www.lgesemi .c o m mail:lge@lgesemi.com SS22B-SS220B 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers RATINGSAND CHARACTERISTIC CURVES (SS22B THRU SS220B) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT. (A) RESISTIVE OR INDUCTIVE LOAD 1.5 SS25B-SS220B SS22B-SS24B 1.0 0.5 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 50 PEAK FORWARD SURGE CURRENT. (A) 2.0 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave JEDEC Method AT RATED TL 40 30 20 10 0 0 1 10 NUMBER OF CYCLES AT 60Hz LEAD TEMPERATURE. ( C) O 100 FIG.4-TYPICALREVERSE CHARACTERISTICS FIG.3- TYPICAL FORWARD CHARACTERISTICS 100 SS22B-SS24B SS25B-SS220B 50 TJ=25 C O INSTANTANEOUS FORWARD CURRENT. (A) INSTANTANEOUS REVERSE CURRENT. (mA) O SS25B-SS26B 10 SS22B-SS24B 1 SS29B-SS210B 0.1 SS215B-SS220B PULSE WIDTH=300 S 1% DUTY CYCLE 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ=125 C 10 1 O TJ=75 C 0.1 0.01 0.001 1.6 O TJ=25 C 0 100 120 140 20 40 60 80 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) FIG.5-TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE.(pF) 400 Tj=25 C f=1.0MHz Vsig=50mVp-p O 100 10 0.1 SS29B-SS220B SS22B-SS24B SS25B-SS26B 1 10 100 REVERSE VOLTAGE. (V) FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 10 1 0.1 0.01 1 T, PULSE DURATION. (sec) 0.1 10 PACKAGE SPQ/PCS CARTON SPQ/PCS CARTON SIZE/CM CARTON GW/KG CARTON NW/KG SMB 3000/REEL 48000 36X35.8X36.5 12.00 11.00 ht t p : // Revision:20170701-P1 TRANSIENT THERMAL IMPEDANCE. (OC/W) 100 www.lgesemi .c o m 100 mail:lge@lgesemi.com