HX3415(4A) (SOT-23)

HX3415 P-Channel Enhancement Mode MOSFET Schematic diagram Description The HX3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =-20V，ID =-4A     RDS(ON)(Typ.)=42mΩ @VGS=-2.5V RDS(ON)(Typ.)=38.3mΩ @VGS=-4.5V High power and current handing capability Lead free product is acquired Surface mount package ESD Rating: 2500V HBM Marking and pin assignment SOT23-3 (TOP VIEW) Application   D PWM applications Load switch 3 Package  SOT-23 1 G 2 S Ordering Information Part Number HX3415 Storage Temperature Package Devices Per Reel -55°C to +150°C SOT-23 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS -20 V Gate-source voltage VGS ±8 V Drain current-continuousa@Tj=125℃ -pulse db ID -4 A IDM -30 A TA=25℃ Maximum power dissipation TA=70℃ Operating junction Temperature range 1 PD Tj 1 1.4 -55—150 W ℃ HX3415 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BVDSS VGS=0V, ID=-250µA -20 - - V Zero gate voltage drain current IDSS VDS=-20V, VGS=0V - - -1 µA Gate-body leakage IGSS VDS=0V, VGS=±8V - - ±10 µA -0.4 -0.59 -0.9 V VGS=-4.5V, ID=-4A - 38.3 45 VGS=-2.5V, ID=-4A - 46.4 60 VGS=-5V, ID=-4A 8 - - - 751 - - 115 - - 80 - - 13 - - 9 - - 19 - - 29 - - 9.3 - - 1 - - 2.2 - - -0.81 -1.2 ON Characteristics Gate threshold voltage VGS(th) Drain-source on-state resistance RDS(ON) Forward transconductance VDS=VGS, ID=-250µA gfs mΩ S Dynamic Characteristics Input capacitance CISS Output capacitance COSS Reverse transfer capacitance CRSS VDS=-10V ,VGS=0V f=1.0MHz pF Switching Characteristics Turn-on delay time tD(ON) Rise time VDD=-10V ID=-2.8A VGEN=-4.5V RL=10ohm RGEN=-60ohm tr Turn-off delay time tD(OFF) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=-10V,ID=-3A VGS=-4.5V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage VSD VGS=0V,Is=-1.25A Notes: a. surface mounted on FR4 board,t≤10sec b. pulse test: pulse width≤300μs,duty≤2% c. guaranteed by design, not subject to production testing Thermal Characteristics Thermal Resistance junction-to ambient Rth JA 2 100 ℃/W V HX3415 Typical Performance Characteristics 3 HX3415 4 HX3415 5 HX3415 Package Information  SOT-23 6