BAS16GW
High-speed switching diode
23 November 2016
Product data sheet
1. General description
High-speed switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD)
plastic package.
2. Features and benefits
•
•
•
•
•
•
High switching speed: trr ≤ 4 ns
Low leakage current
Reverse voltage VR ≤ 100 V
Low capacitance: Cd ≤ 1.5 pF
Small SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
High-speed switching at high voltage
General-purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VR
reverse voltage
Tj = 25 °C
-
-
100
V
IR
reverse current
VR = 80 V; pulsed; Tj = 25 °C
-
-
0.5
µA
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Switched from IF = 10
mA to IR = 10 mA; Tj = 25 °C
-
-
4
ns
BAS16GW
Nexperia
High-speed switching diode
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
K
Cathode
2
A
Anode
Simplified outline
1
Graphic symbol
2
SOD123
1
2
sym001
6. Ordering information
Table 3. Ordering information
Type number
BAS16GW
Package
Name
Description
Version
SOD123
Plastic surface-mounted package; 2 leads
SOD123
7. Marking
Table 4. Marking codes
Type number
Marking code
BAS16GW
GA
BAS16GW
Product data sheet
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BAS16GW
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High-speed switching diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VRRM
repetitive peak reverse
voltage
Tj = 25 °C
-
100
V
VR
reverse voltage
-
100
V
IF
forward current
-
215
mA
IFRM
repetitive peak forward
current
tp ≤ 0.5 ms; δ ≤ 0.25
-
500
mA
IFSM
non-repetitive peak
forward current
tp = 1 µs; Tj(init) = 25 °C; square wave
-
4
A
tp = 1 ms; Tj(init) = 25 °C; square wave
-
1
A
tp = 1 s; Tj(init) = 25 °C; square wave
Ptot
total power dissipation
Tamb ≤ 25 °C
-
0.5
A
[1]
-
357
mW
[2]
-
600
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-55
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated mounting pad for cathode 1cm .
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Rth(j-a)
Rth(j-sp)
[1]
[2]
[3]
Parameter
thermal resistance
from junction to
ambient
Conditions
In free air
thermal resistance
from junction to solder
point
Min
Typ
Max
Unit
[1]
-
-
350
K/W
[2]
-
-
210
K/W
[3]
-
-
58
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for cathode 1cm .
Soldering point of cathode tab.
BAS16GW
Product data sheet
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BAS16GW
Nexperia
High-speed switching diode
aaa-025046
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.50
0.33
0.25
0.20
0.10
0.05
10
0.01
0.02
0
1
10-5
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-025047
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.50
0.25
0.10
0.75
0.33
0.20
0.05
10
0
1
10-5
0.01
0.02
10-4
10-3
10-2
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
10-1
1
10
102
2
tp (s)
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
BAS16GW
Product data sheet
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BAS16GW
Nexperia
High-speed switching diode
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VF
forward voltage
IF = 1 mA; tp ≤ 300 µs; δ = 0.02 ;
Tj = 25 °C
-
-
715
mV
IF = 10 mA; tp ≤ 300 µs; δ = 0.02 ;
Tj = 25 °C
-
-
855
mV
IF = 50 mA; tp ≤ 300 µs; δ = 0.02 ;
Tj = 25 °C
-
-
1
V
IF = 150 mA; tp ≤ 300 µs; δ = 0.02 ;
Tj = 25 °C
-
-
1.25
V
VR = 25 V; pulsed; Tj = 25 °C
-
-
30
nA
VR = 80 V; pulsed; Tj = 25 °C
-
-
0.5
µA
VR = 25 V; pulsed; Tj = 150 °C
-
-
30
µA
VR = 80 V; pulsed; Tj = 150 °C
-
-
50
µA
IR
reverse current
Cd
diode capacitance
f = 1 MHz; VR = 0 V; Tj = 25 °C
-
-
1.5
pF
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Switched from IF = 10
mA to IR = 10 mA; Tj = 25 °C
-
-
4
ns
VFR
forward recovery
voltage
IF = 10 mA; tr = 20 ns
-
-
1.75
V
006aab132
103
mbg704
102
IF
(mA)
IFSM
(A)
102
10
10
(1)
1
10- 1
0
0.2
0.4
(2)
0.6
(3)
1
(4)
0.8
1.0
10- 1
1.2
1.4
VF (V)
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = -40 °C
Fig. 3.
Product data sheet
10
102
103
tp (µs)
104
Based on square wave currents.
Tj(init) = 25 °C
Fig. 4.
Forward current as a function of forward
voltage; typical values
BAS16GW
1
Non-repetitive peak forward current as a
function of pulse duration; maximum values
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BAS16GW
Nexperia
High-speed switching diode
006aab133
102
IR
(µA)
10
(1)
1
(2)
mbg446
0.8
Cd
(pF)
0.6
10- 1
0.4
(3)
10- 2
10- 3
0.2
10- 4
10- 5
(4)
0
20
40
60
80
VR (V)
0
100
(1) Tamb = 150 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
(4) Tamb = -40 °C
Fig. 5.
0
4
8
12
VR (V)
16
f = 1 MHz; Tamb = 25 °C
Fig. 6.
Diode capacitance as a function of reverse
voltage; typical values
Reverse current as a function of reverse
voltage; typical values
11. Test information
tr
D.U.T.
IF
RS = 50 Ω
tp
t
10 %
+ IF
SAMPLING
OSCILLOSCOPE
trr
t
Ri = 50 Ω
V = VR + IF × RS
mga881
(1)
90 %
VR
input signal
output signal
(1) IR = 1 mA
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05
Oscilloscope: rise time tr = 0.35 ns
Fig. 7.
Reverse recovery time test circuit and waveforms
I
RS = 50 Ω
1 kΩ
D.U.T.
450 Ω
I
V
90 %
OSCILLOSCOPE
VFR
Ri = 50 Ω
10 %
tr
tp
input signal
t
t
output signal
mga882
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty cycle δ ≤ 0.005
Fig. 8.
Forward recovery voltage test circuit and waveforms
BAS16GW
Product data sheet
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BAS16GW
Nexperia
High-speed switching diode
12. Package outline
3.75
3.45
2.80
2.55
1.3
1.0
1
2
1.7
1.5
Dimensions in mm
Fig. 9.
16-10-13
Package outline SOD123
13. Soldering
SOD123
4.58
3.27
3.1
2.1 1.62
1.12 1.22 1.42
0.81
0.91
0.81
2.36
0.91
4.18
1.11
occupied area
solder resist
Cu pad
solder paste
Dimensions in mm
1.11
16-05-10
16-08-31
sod123_fr
Fig. 10. Reflow soldering footprint for SOD123
BAS16GW
Product data sheet
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BAS16GW
Nexperia
High-speed switching diode
SOD123
7.5
2.65
2.5
2
4.5
3.5 2.55 2.4
1.2
occupied area
solder resist
solder land
glue dot
Dimensions in mm
0.33
1.2
16-09-02
16-09-06
sod123_fw
Fig. 11. Wave soldering footprint for SOD123
BAS16GW
Product data sheet
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BAS16GW
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High-speed switching diode
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
BAS16GW v.1
20161123
Product data sheet
-
-
BAS16GW
Product data sheet
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BAS16GW
Nexperia
High-speed switching diode
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Data sheet status
Document
[1] [2]
status
Product
[3]
status
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
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BAS16GW
Product data sheet
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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BAS16GW
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High-speed switching diode
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
BAS16GW
Product data sheet
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BAS16GW
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High-speed switching diode
16. Contents
1. General description......................................................1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 5
11. Test information......................................................... 6
12. Package outline.......................................................... 7
13. Soldering..................................................................... 7
14. Revision history..........................................................9
15. Legal information..................................................... 10
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Nexperia B.V. 2017. All rights reserved
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Date of release: 23 November 2016
BAS16GW
Product data sheet
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