BZT52C30

BZT52C2V0 THRU BZT52C75 Silicon Planar Zener Diodes PINNING Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5% PIN DESCRIPTION 1 Cathode 2 Anode 2 1 Top View Simplified outline SOD-123 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Power Dissipation Ptot 500 mW Junction Temperature TJ 150 O TStg - 55 to + 150 O Symbol Max. RthA 340 VF 0.9 Storage Temperature Range C C Characteristics at Ta = 25 OC Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 10 mA 1 of 4 Unit C/W O V BZT52C2V0 THRU BZT52C75 Characteristics at Ta = 25 OC Zener Voltage Range 1) Type V znom V BZT52C2V0 BZT52C2V2 BZT52C2V4 BZT52C2V7 BZT52C3V0 BZT52C3V3 BZT52C3V6 BZT52C3V9 BZT52C4V3 BZT52C4V7 BZT52C5V1 BZT52C5V6 BZT52C6V2 BZT52C6V8 BZT52C7V5 BZT52C8V2 BZT52C9V1 BZT52C10 BZT52C11 BZT52C12 BZT52C13 BZT52C15 BZT52C16 BZT52C18 BZT52C20 BZT52C22 BZT52C24 BZT52C27 BZT52C30 BZT52C33 BZT52C36 BZT52C39 BZT52C43 BZT52C47 BZT52C51 BZT52C56 BZT52C62 BZT52C68 BZT52C75 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 1) l ZT for V ZT mA V 5 1.8...2.15 5 2.08...2.33 5 2.28...2.56 5 2.5...2.9 5 2.8...3.2 5 3.1...3.5 5 3.4...3.8 5 3.7...4.1 5 4...4.6 5 4.4...5 5 4.8...5.4 5 5.2...6 5 5.8...6.6 5 6.4...7.2 5 7...7.9 5 7.7...8.7 5 8.5...9.6 5 9.4...10.6 5 10.4...11.6 5 11.4...12.7 5 12.4...14.1 5 13.8...15.6 5 15.3...17.1 5 16.8...19.1 5 18.8...21.2 5 20.8...23.3 5 22.8...25.6 5 25.1...28.9 5 28...32 5 31...35 5 34...38 2.5 37...41 2.5 40...46 2.5 44...50 2.5 48...54 2.5 52...60 2.5 58...66 2.5 64...72 2.5 70...79 VZ is tested with pulses (20 ms). ZZT is measured at IZ by given a very small A.C. current signal. 2) 2 of 4 Dynamic Impedance 2) ZZT (Max.) Ω 100 100 100 110 120 130 130 130 130 130 130 80 50 30 30 30 30 30 30 35 35 40 40 45 50 55 60 70 80 80 90 100 130 150 180 180 200 250 300 at I Z mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 Reverse Leakage Current I R (Max.) μA 120 120 120 120 50 20 10 5 5 2 2 1 1 0.5 0.5 0.5 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 2 2 2 1 1 0.2 0.2 0.2 at VR V 0.5 0.7 1 1 1 1 1 1 1 1 1.5 2.5 3 3.5 4 5 6 7 8 9 10 11 12 13 15 17 19 21 23 25 27 30 33 36 39 43 47 52 57 BZT52C2V0 THRU BZT52C75 Breakdown characteristics Tj = constant (pulsed) mA 50 Tj=25o C 3V9 2V7 6V8 4V7 Iz 3V3 40 8V2 5V6 30 20 Test current Iz 5mA 10 0 0 1 3 2 4 5 6 8 7 9 10 V Vz Breakdown characteristics Tj = constant (pulsed) mA 30 Tj=25 oC 10 12 Iz 15 20 18 22 27 Test current Iz 5mA 10 33 0 0 10 20 30 Vz 3 of 4 40 V BZT52C2V0 THRU BZT52C75 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-123 4 of 4