LLDB3

DongGuan Tongke Electronic Co.,LTD LLDB3/LLDB4 SILICON BIDIRECTIONAL DIACS Features The three layer, two terminal, axial lead,hermetically sealed diacs are designed specifically for triggering thyristors. They demonstrate low breakover current at breakover voltage as they withstand peak pulse current, The breakover symmetry is within three volts (DB3,DB4). These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming,universa motor speed control ,and heat control. ! ! ! ! ! B C MiniMELF Mechanical Data ! ! A Dim MIn Max A 3.30 3.70 B 1.30 1.60 C 0.28 0.50 Case: MiniMELF Glass Case (SOD-80) Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Color band denotes cathode end Weight: 0.05 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version, All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C ABSOLUTE RATINGS VALUE PARAMETERS SYMBOL UNITS LLDB3 / LLDB4 Power Dissipation on Printed Cir cuit(L=10mm) TA=50℃ Repetitive Peak on-state Tp=10uS Current f=100HZ Storage and Operating Juntion Temperature Pc 150 mW ITRM 2.0 A TSTG/TJ -40 to +125 ℃ ELECTRICAL CHARACTERISTICS VALUE PAPRAMETERS Breakover Voltage* Breakover Voltage Symmetry Dynamic Breakover Voltage TEST CONDITIONS SYMBOLS C=22nf** See Diagram 1 VBO 1+VBOI- C=22nf** 1-VBOI See Diagram 1 1 ±△V1 LLDB3 LLDB4 Min 28 35 Typ 32 45 Max 36 45 UNITS V Max ±3 V Min 5 V △I=(IBO to IF=10mA) See FIG 1 Output Voltage* VO See FIG 2 Min 5 V Breakover Current* IBO C=22nf** Max 100 uA Rise Time* tr See FIG 3 Typ 1.5 uS Leakage Current* IB Max 10 uA IB=0.5 VBO MAX See FIG 3 NOTE:* Electrical characteristics applicable in both forward and reverse directions. ** Connected in parallel with the devices. LLDB3/LLDB4 1 of 2 www.tongke888.com 400-6922-883 DongGuan Tongke Electronic Co.,LTD LLDB3/LLDB4 FIG.1-CURRENT-VOLTAGE CHARACTERISTICS FIG.2-TEST CIRCUIT FOR OUTPUT VOLATGE +IF 10mA 10KΩ 500KΩ D.U.T 220V 60HZ VO IB IB R=20Ω 0.1uF 0.5VBO -V +V △V VBO -IF FIG.4-TEST CIRCUIT FOR OUTPUT VOLATGE FIG.3-TEST CIRCUIT SEE FIG.2 ADJUST R FOR Ip=0.5A P(mW) 160 IP 90% 140 120 100 80 10% 60 tr 40 Tamb(°C) 20 0 0 10 20 30 40 50 60 70 80 FIG.5-RELATIVE VARIATION OF VBO VERSUS JUNCTION TEMPERATURE(TYPICAL VALUES) 90 100 110 120 130 FIG.6-PEAK PULSE CURRENT VERSUS PULSE DURATION (MAXIMUM VALUES) ITRM(A) VBO(IJ) VBO(TJ=25℃） 2 1.08 1 f = 100Hz Tjinitial=25°C .06 TJ = (°C) 1.04 0.1 tp(us) .02 .00 0.01 25 50 LLDB3/LLDB4 75 100 125 10 2 of 2 100 1000 10000 www.tongke888.com 400-6922-883