SS5819D

SS5817D THRU SS5819D SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Reverse Voltage - 20 to 40 V Forward Current - 1 A Features • Plastic package has Underwriters Laboratory Classification 94V-0 • Metal silicon junction, majority carrier conduction • For surface mount applications • Guard ring for overvoltage protection • Low power loss, high efficiency • High current capability, Low forward voltage drop • High surge capability H C Mechanical Data • Case: SMA (DO-214AC) molded plastic case • Terminals: Solder plate, solderable per MIL-STD -750, method 2026 • Polarity: Color band denotes cathode end • Mounting Position: Any E T M E S Maximum Ratings and Electrical Characteristics Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, resistive or inductive load, for capacitive load, derate by 20 % Parameter Symbols SS5817D SS5818D SS5819D Units Maximum Repetitive Peak Reverse Voltage VRRM 20 30 40 V Maximum RMS Voltage VRMS 14 21 28 V Maximum DC Blocking Voltage VDC 20 30 40 V Maximum Average Forward Rectified Current 0.375" (9.5 mm) Load Length at TL = 90 OC IF(AV) 1 A Peak Forward Surge Current 8.3 mS Single Half Sine-wave Superimposed on Rated Load (JEDEC Method) at TL = 70 OC IFSM 25 A Maximum Instantaneous Forward Voltage at 1 A Maximum Instantaneous Reverse Current at Rated DC Blocking Voltage VF O at Ta = 25 C at Ta =100 OC Typical Junction Capacitance 1) Typical Thermal Resistance 2) Operating and Storage Temperature Range 1) 2) 0.45 0.55 IR 0.5 10 Cj 110 RθJA 88 Tj, Tstg - 65 to + 125 0.6 V mA pF O C/W O C Measured at 1 MHz and reverse voltage of 4 V. Thermal Resistance (from Junction to Ambient) Vertical P.C.B Mounted, with 1.5 X 1.5" (38 X 38 mm) copper pads. SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：27/02/2012 J Rev：01 SS5817D THRU SS5819D H C E T M E S SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated：27/02/2012 J Rev：01