ULN2004M/TR

ULN2003/ULN2004 ULN2003/ULN2004 Seven Darlington array Features ■ Seven Darlingtons per package ■ Output current 500 mA per driver (600 mA peak) ■ Output voltage 50 V ■ Integrated suppression diodes for inductive loads ■ Outputs can be paralleled for higher current ■ TTL/CMOS/PMOS/DTL compatible inputs ■ Inputs pinned opposite outputs to simplify layout DIP-16 SOP-16 (Narrow) These versatile devices are useful for driving a wide range of loads including solenoids, relays DC motors, LED displays filament lamps, thermal printheads and high power buffers. Description The ULN2003A/2004A are supplied in 16 pin plastic DIP packages with a copper leadframe to reduce thermal resistance. They are available also in small outline package (SOP-16) as ULN2003D/2004D The ULN2003, ULN2004, are high voltage, high current Darlington arrays each containing seven open collector Darlington pairs with common emitters. Each channel rated at 500 mA and can withstand peak currents of 600 mA. Suppression diodes are included for inductive load driving and the inputs are pinned opposite the outputs to simplify board layout. Pin configuration The versions interface to all common logic families: – ULN2003 (5 V TTL, CMOS) – ULN2004 (6 - 15 V CMOS, PMOS) (top view) http://www.hgsemi.com.cn 1 2018 AUG ULN2003/ULN2004 Diagram Schematic diagram ULN2003 (each driver) ULN2004 (each driver) http://www.hgsemi.com.cn 2 2018 AUG ULN2003/ULN2004 Maximum ratings Absolute maximum ratings Symbol Parameter Value Unit VO Output voltage 50 V VI Input voltage (for ULN2003A/D - 2004A/D ) 30 V IC Continuous collector current 500 mA IB Continuous base current 25 mA TA Operating ambient temperature range - 40 to 85 °C Storage temperature range - 55 to 150 °C 150 °C TSTG TJ Junction temperature Thermal data Symbol RthJA Parameter Thermal resistance junction-ambient, Max. http://www.hgsemi.com.cn 3 DIP-16 SO-16 Unit 70 120 °C/W 2018 AUG ULN2003/ULN2004 Electrical characteristics TA = 25 °C unless otherwise specified. Electrical characteristics Symbol ICEX Parameter Output leakage current Collector-emitter saturation VCE(SAT) voltage (Figure 3. ) II(ON) Input current (Figure 4. ) Test condition Min. VI(ON) 50 TA = 85°C, VCE = 50 V (Figure 1. ) 100 TA = 85°C for ULN2002, VCE = 50 V, VI = 6 V (Figure 2.) 500 TA = 85°C for ULN2002, VCE = 50 V, VI = 1V (Figure 2.) 500 IC = 100 mA, IB = 250 µA 0.9 1.1 IC = 200 mA, IB= 350 µA 1.1 1.3 IC = 350 mA, IB= 500 µA 1.3 1.6 for ULN2002, VI = 17 V 0.82 1.25 for ULN2003, VI = 3.85 V 0.93 1.35 for ULN2004, VI = 5 V 0.35 0.5 1 1.45 Input current (Figure 5. ) TA = 85°C, IC = 500 µA Input voltage (Figure 6.) VCE= 2 V, for ULN2002 IC = 300 mA for ULN2003 IC = 200 mA IC = 250 mA IC = 300 mA for ULN2004 IC = 125 mA IC = 200 mA IC = 275 mA IC = 350 mA hFE DC Forward current gain (Figure 3.) CI Input capacitance tPLH Turn-on delay time tPHL Max. VCE = 50 V, (Figure 1. ) for ULN2001, VCE = 2 V, IC = 350 mA Unit µA V mA VI = 12 V II(OFF) Typ. 50 65 µA 13 2.4 2.7 3 V 5 6 7 8 1000 15 25 pF 0.5 VI to 0.5 VO 0.25 1 µs Turn-off delay time 0.5 VI to 0.5 VO 0.25 1 µs Clamp diode leakage current (Figure 7.) VR = 50 V 50 IR TA = 85°C, VR = 50 V 100 VF Clamp diode forward voltage (Figure 8. ) http://www.hgsemi.com.cn µA IF = 350 mA 4 1.7 2 V 2018 AUG ULN2003/ULN2004 Test circuits Figure 1. Output leakage currentFigure Figure 2. Output leakage current Figure 3.Collector-emitter saturation voltage Figure 4.Input current (ON) Figure 5.Input current (OFF) http://www.hgsemi.com.cn Figure 6.Input voltage 5 2018 AUG ULN2003/ULN2004 Figure 7.Clamp diode leakage current http://www.hgsemi.com.cn Figure 8.Clamp diode forward voltage 6 2018 AUG ULN2003/ULN2004 Typical performance characteristics Figure 10.Collector current vs. saturation voltage Figure 9.Collector current vs. saturation voltage (TJ = 25°C) I OUT [mA] 85°C 25°C -30°C IIN = 500 µA VCESAT [V] Figure 11.Input current vs. input voltage Figure 12.Input current vs. input voltage (Ta = 25°C) ULN2003A Ta = 25°C ULN2003A Iout=100 mA Io ut=200mA Max Iou t=300mA Typ Min Figure 13.Collector current vs. input current Figure 14.h FE vs. output current DC Current Transfer Ratio (hFE) 10000 85 °C I OUT [mA] -30 °C 25 °C VCE = 2 V VCE = 2 V 85 °C 1000 -40 °C 25 °C 100 10 1 1 IIN [μA] http://www.hgsemi.com.cn 10 100 1000 Output current IOUT [mA] 7 2018 AUG ULN2003/ULN2004 Figure 15.Peak collector current vs. duty cycle (DIP-16) Ic peak (mA) Figure 16.Peak collector current vs. duty cycle (SO-16) Ic peak (mA) D96IN451 NUMBER OF ACTIVE OUTPUT 7 6 5 500 4 3 2 D96IN452A Tamb=70°C (SO16) 500 400 400 2 300 300 Tamb=70°C (DIP16) 3 5 200 200 7 100 100 0 0 NUMBER OF ACTIVE OUTPUT 0 20 http://www.hgsemi.com.cn 40 60 80 0 DC 8 20 40 60 80 100 DC 2018 AUG