Plastic-Encapsulate Mosfets
AO3407
FEATURES
P-Channel MOSFET
The AO3407 uses advanced trench technology to provide
excellent RDS(ON)
and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
D
1.Gate
2.Source
G
SOT-23
3.Drain
S
Absolute Maximum Ratings (TA=25oC, unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID
-4.1
A
Power Dissipation
PD
350
mW
RθJA
357
℃/W
Thermal Resistance from Junction to Ambient
Junction Temperature
TJ
150
℃
Storage Temperature
Tstg
-55~+150
℃
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P4-P1
Plastic-Encapsulate Mosfets
AO3407
Electrical Characteristics (TA=25°C, unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
Static characteristics
Drain-source breakdown voltage
BVDSS
VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-24V,VGS = 0V
-1
µA
Gate-source leakage current
IGSS
VGS =±20V, VDS = 0V
±100
nA
VGS =-10V, ID =-4.1A
60
mΩ
VGS =-4.5V, ID =-3A
87
mΩ
Drain-source on-resistance (note 1)
Forward tranconductance (note 1)
Gate threshold voltage
Diode forward voltage (note 1)
RDS(on)
gFS
VGS(th)
VSD
-30
VDS =-5V, ID =-4A
5.5
VDS =VGS, ID =-250µA
-1
V
S
IS=-1A,VGS=0V
-3
V
-1
V
Dynamic characteristics (note 2)
Input capacitance
Ciss
700
pF
Output capacitance
Coss
120
pF
Reverse transfer capacitance
Crss
75
pF
td(on)
8.6
ns
VGS=-10V,VDS=-15V,
5.0
ns
RL=3.6Ω,RGEN=3Ω
28.2
ns
13.5
ns
VDS =-15V,VGS =0V,f =1MHz
Switching Characteristics (note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
tr
td(off)
tf
Notes:
1.
2.
Pulse test: Pulse width ≤300µs, duty cycle ≤2%.
These parameters have no way to verify.
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P4-P2
Plastic-Encapsulate Mosfets
AO3407
Typical
Characteristics
30
30
VDS=-5V
-6V
25
25
-10V
-4.5V
20
-ID(A)
-ID (A)
20
15
15
-4V
10
10
25°C
125°C
5
5
VGS=-3.5V
0
0
0
1
2
3
4
0.5
5
80
2.5
3.5
4.5
5.5
Normalized On-Resistance
1.8
70
VGS=-4.5V
60
RDS(ON) (mΩ
Ω)
1.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
50
40
30
VGS=-10V
20
VGS=-10V
ID=-4.1A
1.6
1.4
17
5
2
10
=-4.5V
1.2
VGS
ID=-3A
1
0.8
10
0
2
0
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
120
ID=-4.1A
1.0E+01
100
40
125°C
80
125°C
60
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
1.0E-01
1.0E-02
25°C
1.0E-03
40
25°C
1.0E-04
1.0E-05
20
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
GUANGDONG HOTTECH
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
INDUSTRIAL CO., LTD
Page:P4-P3
Plastic-Encapsulate Mosfets
AO3407
Typical
Characteristics
800
10
VDS=-15V
ID=-4.1A
8
Ciss
Capacitance (pF)
-VGS (Volts)
600
6
4
400
Coss
200
2
0
Crss
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
10
100.0
5
10
15
20
25
-VDS (Volts)
Figure 8: Capacitance Characteristics
30
40
TA=25°C
10µs
RDS(ON)
limited
100µs
1ms
1.0
10ms
10ms
0.1
30
Power (W)
ID (Amps)
10.0
10
10s
TJ(Max)=150°C
TA=25°C
20
DC
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.01
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P4-P4
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