SI2307

Plastic-Encapsulate Mosfets FEATURES HOA2307 Lower on-resistance P-Channel MOSFET Reliable and Rugged Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-source Voltage VGS 20 V 1.Gate 2.Source 3.Drain Drain Current (Continuous) a o Total Power Dissipation @TA=25 C b Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted) ID -2.7 A PD 1.1 W Tj, Tstg -55 to +150 °C RθJA 114 °C/W SOT-23 Electrical Characteristics (TA=25°C, unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID =-250µA -30 VGS(th) VDS =VGS, ID =-250µA -1 Gate-Source Leakage IGSS VDS =0V, VGS =±20V ±100 Zero Gate Voltage Drain Current IDSS VDS =-30V, VGS =0V -1 VDS =-30V, VGS =0V, TJ=55℃ -10 Gate-Source Threshold Voltage Drain-Source On-State Resistancec Forward Transconductancec RDS(on) gfs -3 VGS =-4.5V, ID =-2.5A 0.110 0.138 VGS =-10V, ID =-3.5A 0.073 0.088 VDS =-10V, ID =-3.5A 7 V nA µA Ω S d Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg GUANGDONG HOTTECH 340 VDS =-15V,VGS =0V,f =1MHz pF 67 51 VDS =-15V,VGS =-4.5V, ID =-2.5A f =1MHz INDUSTRIAL CO., LTD 4.1 1.3 6.2 nC 1.8 10 Ω Page:P3-P1 Plastic-Encapsulate Mosfets HOA2307 Turn-On Delay Time Rise Time td(on) tr Turn-Off Delay Time Fall Time td(off) tf VDD=-15V, RL=15Ω, ID =-1A, VGEN=-4.5V,Rg=1Ω 40 60 40 60 20 40 17 30 -0.8 -1.2 ns Drain-source Body diode characteristics Body Diode Voltage VSD IS=-0.75A, ,VGS =0 V Notes: a. t=5s. b. Surface mounted on 1” ×1” FR4 board. c. Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%. d. Guaranteed by design, not subject to production testing. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3-P2 Plastic-Encapsulate Mosfets HOA2307 Typical Characteristics Output Characteristics -20 Pulsed Ta=25℃ Pulsed VGS=-4.5V -8 VGS=-4.0V -12 VGS=-3.5V -8 VGS=-3.0V DRAIN CURRENT ID (A) -16 DRAIN CURRENT ID (A) Transfer Characteristics -10 VGS=-10V,-8V,-6V Ta=25℃ -4 -6 -4 -2 -0 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE RDS(ON) 300 —— VDS -5 -0 -1 -2 -3 GATE TO SOURCE VOLTAGE (V) ID RDS(ON) 500 —— -4 VGS VGS Ta=25℃ Ta=25℃ Pulsed Pulsed 250 400 ON-RESISTANCE RDS(ON) (m) ON-RESISTANCE RDS(ON) (m) -5 (V) 200 VGS=-4.5V 150 VGS=-10V 100 300 ID=-3.5A 200 100 50 0 -0 -4 -8 DRAIN CURRENT IS —— -10 -12 ID -16 -20 (A) -0 -4 -8 -12 GATE TO SOURCE VOLTAGE -16 VGS -20 (V) VSD Ta=25℃ SOURCE CURRENT IS (A) Pulsed -1 -0.1 -0.01 -0.0 -0.3 -0.6 -0.9 SOURCE TO DRAIN VOLTAGE -1.2 -1.5 VSD (V) GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P3-P3