BAS21

Plastic-Encapsulate Transistors SWITCHING DIODE BAS21/A/C/S FEATURES • Fast Switching Speed • Surface Mount Package Ideally Suited for Automatic Insertion • For General Purpose Switching Applications • High Conductance MARKING SOT-23 BAS21: JS BAS21A: JS2 MAXIMUM RATINGS (TA=25 BAS21C:JS3 BAS21S: JS4 unless otherwise noted) Parameter Symbol Repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM Limit Unit 250 V DC blocking voltage VR Forward continuous current IFM 400 mA Average rectified output current IO 200 mA Non-repetitive peak forward surge current @ t = 1.0µs IFSM 2.5 A 0.5 @ t = 1.0s Repetitive peak forward surge current Power dissipation Thermal resistance junction to ambient Junction temperature Storage temperature range IFRM 625 mA PD 225 mW RθJA 55 /W TJ 150 TSTG -55~+150 Electrical Ratings @TA=25 Parameter Symbol Test V(BR) IR= 100µA Reverse voltage leakage current IR VR=200V 0.1 Forward voltage VF IF=100mA 1000 IF=200mA 1250 Diode capacitance CD VR=0V, f=1MHz 5 pF Reveres recovery time trr IF=IR=30mA,Irr=0.1×IR,RL=100Ω 50 ns Reverse breakdown voltage GUANGDONG HOTTECH conditions INDUSTRIAL CO., LTD Min Max 250 Unit V µA mV Page:P2-P1 Plastic-Encapsulate Transistors BAS21/A/C/S Typical Characteristics C REVERSE CURRENT IR C o T= a 2 5 FORWARD CURRENT 10 1 0.1 0.01 0.0 0.4 0.8 1.2 FORWARD VOLTAGE 1.6 VF Characteristics o Ta=100 C 100 10 o Ta=25 C 1 2.0 0 40 (V) 80 120 REVERSE VOLTAGE 160 VR 200 (V) Power Derating Curve Capacitance Characteristics 1.6 Reverse 1000 o T= a 1 00 IF (mA) 100 Characteristics (nA) Forward 1000 300 1.2 1.0 0.8 0.6 (mW) 1.4 250 PD f=1MHz 200 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) Ta=25℃ 0 4 8 12 REVERSE VOLTAGE 16 VR (V) GUANGDONG HOTTECH 20 150 100 50 0 0 25 50 75 100 AMBIENT TEMPERATURE INDUSTRIAL CO., LTD 125 Ta 150 (℃) Page:P2-P2