MMBT2907A

Plastic-Encapsulate Transistors FEATURES MMBT2907A (PNP) Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) Marking:2F MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -600 mA Collector Power Dissipation PC 250 mW RθJA 500 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Thermal Resistance Junction to Ambient ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 1. BASE 2. EMITTER SOT-23 3. COLLECTO unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-10μA,IE=0 -60 V Collector-emitter breakdown voltage VCEO* IC=-10mA,IB=0 -60 V Emitter-base breakdown voltage VEBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -20 nA Base cut-off current IEBO VCE=-3V, IC =0 -10 nA Collector cut-off current ICEX VCE=-30 V, VBE(off) =-0.5V -50 nA DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage hFE(1) VCE=-10V,IC=-150mA hFE(2) VCE=-10V,IC=-0.1mA hFE(3) VCE=-10V,IC=-1mA 100 hFE(4) VCE=-10V,IC=-10mA 100 hFE(5) VCE=-10V,IC=-500mA 50 VCE(sat)* IC=-150mA,IB=-15mA -0.4 V VCE(sat)* IC=-500mA,IB=-50mA -1.6 V VBE(sat)* IC=-150mA,IB=-15mA -1.3 V VBE(sat)* IC=-500mA,IB=-50mA -2.6 V Transition frequency fT VCE=-20V,IC=-50mA,f=100MHz Delay time td Rise time tr Storage time tS VCE=-6V,IC=-150mA, Fall time tf IB1=- IB2=- 15mA 100 300 75 200 MHz 10 VCE=-30V,IC=-150mA,B1=-15mA nS 25 nS 225 nS 60 nS *Pulse test: tp≤300μS, δ≤0.02. GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors MMBT2907A Typical Characteristics hFE Static Characteristic -0.25 500 —— IC COMMON EMITTER VCE=-10V -800uA -0.20 400 -720uA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (A) COMMON EMITTER Ta=25℃ -640uA -0.15 -560uA -480uA -0.10 -400uA -320uA -240uA -0.05 300 Ta=100℃ Ta=25℃ 200 100 -160uA IB=-80uA -0.00 -0 -2 -4 -6 -8 COLLECTOR-EMITTER VOLTAGE VCEsat -0.9 —— -10 VCE 0 -0.1 -12 IC -10 -100 COLLECTOR CURRENT IC VBEsat IC -1.2 β=10 —— -0.6 Ta=100℃ -0.3 Ta=25℃ -0.0 Ta=25℃ -0.8 Ta=100℃ -0.4 -0.0 -1 -10 -100 COLLECTOR CURRENT IC IC -1 -600 (mA) -10 -100 COLLECTOR CURRENT —— VBE Cob/ Cib 100 -600 —— IC VCB/ VEB f=1MHz IE=0/ IC=0 Ta=25℃ Cib CAPACITANCE C (pF) -100 Ta=100℃ -10 Ta=25℃ -1 -0.1 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 BASE-EMMITER VOLTAGE VBE (V) Pc 300 -600 (mA) COMMON EMITTER VCE=-10V COLLECTOR CURRENT IC (mA) -600 (mA) β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -1 (V) —— Cob 10 1 -0.1 -1 REVERSE VOLTAGE -10 V -20 (V) Ta COLLECTOR POWER DISSIPATION Pc (mW) 250 200 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃ ) GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2