MMBT3906

Plastic-Encapsulate Transistors FEATURES MMBT3906 As complementary type the PNP transistor MMBT3904 is recommended (PNP) Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -200 mA Collector Power Dissipation PC 200 mW Thermal Resistance Junction to Ambient RθJA 625 /W Junction Temperature Tj 150 Storage Temperature Tstg 1. BASE SOT-23 2. EMITTER 3. COLLECTO -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC= -10μA, I E =0 -40 v Collector-emitter breakdown voltage VCEO IC= -1mA, IB =0 -40 v Emitter-base breakdown voltage VEBO IE =-10μA, I C =0 -5 v Collector cut-off current ICBO VCB =-40V, I E = 0 -100 nA Collector cut-off current ICEO VCE=-30V,V BE(off)=3V -50 nA Emitter cut-off current IEBO VEB=-5V, I C =0 -100 nA DC current gain hFE(1) VCE=-1V, I C =-10mA 100 DC current gain hFE(2) VCE =-1V, IC= -100mA 30 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB = -5mA -0.3 v Base-emitter saturation voltage VBE(sat) IC = -50mA, I B = -5mA -0.95 v Transition frequency fT VCE=-20V, I C =-10mA,f=100MHz Delay Time td VCC=-3V,VBE =-0.5V I B1 = IB2=-1.0mA Min Max Unit 300 300 MHZ 35 nS 35 nS Rise Time tr IC=-10mA, Storage Time ts VCC=-3V,I C= -10mA, 225 nS Fall Time tf IB1= IB2= -1mA 75 nS CLASSIFICATION OF Rank O Y Range 120-200 200-300 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors MMBT3906 Typical Characteristics Static Characteristic -500uA -450uA -80 IC Ta=100℃ -350uA -300uA -250uA -200uA -40 —— COMMON EMITTER VCE=-1V -400uA -60 hFE 300 COMMON EMITTER Ta=25℃ DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -100 -150uA 200 Ta=25℃ 100 -100uA -20 IB=-50uA 0 -0.1 -0 -0 -4 -8 -12 -16 COLLECTOR-EMITTER VOLTAGE VCEsat -500 —— VCE -20 -1 -0.3 -10 -3 COLLECTOR CURRENT (V) IC VBEsat -1.2 -100 -30 IC -200 (mA) IC —— BASE-EMITTER SATURATION VOLTAGE VBEsat (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -300 Ta=100℃ -100 Ta=25℃ -30 Ta=25℃ -0.8 Ta=100℃ -0.4 β=10 -10 β=10 -0.0 -1 -3 -30 -10 COLLECTOR CURRENT IC -100 —— IC -200 -100 -1 -10 -3 (mA) -100 -30 COLLECTOR CURRENT VBE Cob/ Cib 9 —— IC VCB/ VEB COMMON EMITTER VCE=-1V f=1MHz IE=0/IC=0 -30 Ta=25℃ Cob Ta=100℃ CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) -200 (mA) -10 -3 Ta=25℃ -1 Cib 3 -0.3 -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 1 -0.1 -1.2 fT 600 —— -1 -0.3 IC PC 250 -10 -3 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (V) —— V -20 (V) Ta Ta=25℃ COLLECTOR POWER DISSIPATION PC (mW) TRANSITION FREQUENCY fT (MHz) VCE=-20V 400 200 200 150 100 50 0 -1 -3 -10 COLLECTOR CURRENT -30 IC (mA) GUANGDONG HOTTECH -50 0 25 50 75 AMBIENT TEMPERATURE INDUSTRIAL CO., LTD 100 Ta 125 150 (℃ ) Page:P2-P2