MMBT4401

Plastic-Encapsulate Transistors FEATURES MMBT4401 (NPN) Switching transistor Marking:2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 600 mA Collector Power Dissipation PC 300 mW Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 1. BASE SOT-23 2. EMITTER 3. COLLECTO unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Collector-base breakdown voltage VCBO IC= 100μA, IE=0 60 V Collector-emitter breakdown voltage VCEO IC= 1mA, IB=0 40 V Emitter-base breakdown voltage VEBO IE= 100μA, IC=0 6 V Collector cut-off current ICB VCB=50 V, IE=0 0.1 μA Collector cut-off current O ICE VCE=30 V, IB=0 0.1 μA Emitter cut-off current O IEB VEB=5V, IC=0 0.1 μA DC current gain O hF VCE=1V, IC=150mA Collector-emitter saturation voltage E VCE(sat) IC=150mA, IB=15mA 0.4 V Base-emitter saturation voltage VBE(sat) IC= 150mA, IB=15mA 0.95 V Transition frequency fT VCE= 10V, IC= 20mA 100 250 300 MHz f = 100MHz GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors MMBT4401 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2