Plastic-Encapsulate Transistors
FEATURES
MMBT4401 (NPN)
Switching transistor
Marking:2X
MAXIMUM RATINGS (TA=25
unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
40
V
Emitter-Base Voltage
VEBO
6
V
Collector Current -Continuous
IC
600
mA
Collector Power Dissipation
PC
300
mW
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
1. BASE
SOT-23
2. EMITTER
3. COLLECTO
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Max
Unit
Collector-base breakdown voltage
VCBO
IC= 100μA, IE=0
60
V
Collector-emitter breakdown voltage
VCEO
IC= 1mA, IB=0
40
V
Emitter-base breakdown voltage
VEBO
IE= 100μA, IC=0
6
V
Collector cut-off current
ICB
VCB=50 V, IE=0
0.1
μA
Collector cut-off current
O
ICE
VCE=30 V, IB=0
0.1
μA
Emitter cut-off current
O
IEB
VEB=5V, IC=0
0.1
μA
DC current gain
O
hF
VCE=1V, IC=150mA
Collector-emitter saturation voltage
E
VCE(sat)
IC=150mA, IB=15mA
0.4
V
Base-emitter saturation voltage
VBE(sat)
IC= 150mA, IB=15mA
0.95
V
Transition frequency
fT
VCE= 10V, IC= 20mA
100
250
300
MHz
f = 100MHz
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P1
Plastic-Encapsulate Transistors
MMBT4401 Typical
Characteristics
GUANGDONG HOTTECH
INDUSTRIAL CO., LTD
Page:P2-P2
