2SA1015

Plastic-Encapsulate Transistors FEATURES 2SA1015 (PNP) High voltage and high current Excellent hFE Linearity Low niose ,Complementary to C1815 MARKING: BA MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.15 A Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 1. BASE 2. EMITTER SOT-23 3. COLLECTO unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC= -100u A, Collector-emitter breakdown voltage VCEO Emitter-base breakdown voltage VEBO IE=0 Min Typ Max Unit -50 V IC= -0.1mA, IB=0 -50 V IE= -100 u A, IC=0 -5 V Collector cut-off current ICB VCB=-50V , IE=0 -0.1 uA Collector cut-off current O ICE VCE= -50V , IB=0 -0.1 uA Emitter cut-off current O IEB VEB=- 5V, IC=0 -0.1 uA DC current gain hOFE VCE=-6V, IC= -2mA 130 400 Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB= -10mA -0.3 V Base-emitter saturation voltage VBE(sat) IC=-100 mA, IB= -10mA -1.1 V fT Transition frequency VCE=-10V, f=30MHz IC= -1mA 80 MHz CLASSIFICATIONOF hFE Rank L H Range 130-200 200-400 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SA1015 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2