2SB1132

Plastic-Encapsulate Transistors FEATURES 2SB1132 (PNP) • Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA • Compliments 2SD1664 Maximum Ratings (Ta=25 Parameter unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V 2. COLLECTO Emitter-Base Voltage VEBO -5 V 3. EMITTER Collector Current -Continuous IC -1 A Collector Power dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Tstg -55to +150 ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol 1. BASE SOT-89 unless otherwise specified) Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-50μA,IE=0 -40 V Collector-emitter breakdown voltage VCEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage VEBO IE=-50μA,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -0.5 μA Emitter cut-off current IEBO VEB=-4V,IC=0 -0.5 μA DC current gain hFE VCE=-3V,IC=-100mA VCE(sat) IC=-500mA,IB=-50mA -0.2 150 Collector-emitter saturation voltage 82 Transition frequency fT VCE=-5V,IC=-50mA,f=30MHz Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 390 -0.5 V MHz 20 30 pF CLASSIFICATION OF hFE Rank P Q R Range 80-180 120-270 180-390 BAP BAQ BAR Marking GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SB1132 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2