2SC3875-ALY

Plastic-Encapsulate Transistors FEATURES 2SC3875 (NPN) • High hFE • Low noise • Complementary to 2SA1504 Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V 2. EMITTER Collector Current -Continuous IC 0.15 A 3. COLLECTO Collector Power dissipation PC 0.15 W Junction Temperature TJ 150 Storage Temperature Tstg -55to +150 ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol 1. BASE SOT-23 unless otherwise specified) Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage VCEO IC= 1mA, IB=0 50 V Emitter-base breakdown voltage VEBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 60V, IE=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA hFE DC current gain VCE= 6V, IC= 2mA Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA base-emitter saturation voltage VBE(sat) IC=100mA, IB= 10mA fT Transition frequency VCE=10V, 70 700 0.1 IC= 1mA 0.25 V 1 V 80 MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHZ 2.0 3.5 pF Noise figure NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ 1.0 10 dB CLASSIFICATION OF hFE Rank O Y GR BL Range 70-140 120-240 200-400 350-700 ALO ALY ALG ALL Marking GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SC3875 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2