2SC945

Plastic-Encapsulate Transistors FEATURES 2SC945 (NPN) Complementary to 2SA733 MARKING: CR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 150 mA Collector Power Dissipation PC 0.2 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 1. BASE SOT-23 2. EMITTER 3. COLLECTO unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V CBO IC=100uA, IE=0 60 V Collector-emitter breakdown voltage V CEO IC=1mA , IB=0 50 V Emitter-base breakdown voltage V EBO IE=0.1mA, IC=0 5 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA Collector cut-off current ICER VCE=55V,R=10MΩ 0.1 uA Emitter cut-off current IEBO VEB=5V , IC=0 0.1 uA hFE(1) VCE=6 V , IC=1mA 130 hFE(2) VCE=6 V , IC=0.1mA 40 DC current gain 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.3 V Base-emitter saturation voltage VBE(sat) IC=100mA, IB=10mA 1 V fT Transition frequency Collector output capacitance Cob Noise figure NF CLASSIFICATION OF VCE=6V,IC=10mA,f =30 MHz 150 MHz VCB=10V,IE=0,f=1MHZ VCE=6V,IC=0.1mA 4 Rg=10kΩ,f=1kMHZ 3.0 pF 10 dB hFE(1) Rank O Y CR BL Range 70-140 120-240 200-400 350-700 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SC945 Typical Characteristics Static Characteristic (mA) IC 27uA 24uA Ta=25℃ 300 DC CURRENT GAIN COLLECTOR CURRENT 8 21uA 18uA 6 IC Ta=100℃ COMMON EMITTER Ta=25℃ 30uA 10 hFE —— 1000 hFE 12 15uA 12uA 4 100 9uA 30 6uA 2 VCE=6V IB=3uA 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCEsat —— VCE 10 0.7 12 IC BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=100℃ Ta=25℃ 30 β=10 10 Cob / Cib 15 100 30 COLLECTOR CURRENT IC COLLECTOR POWER DISSIPATION PC (W) (pF) C CAPACITANCE Cib 5 Cob 0 0.1 Ta=25℃ 600 Ta=100℃ 400 β=10 0.3 1 10 3 PC 0.25 10 150 IC COLLECTOR CURRENT Ta=25℃ 100 (mA) 800 (mA) f=1MHz IE=0 /IC=0 IC VBEsat —— 200 0.1 150 VCB / VEB —— 10 1000 10 30 COLLECTOR CURRENT 100 3 1 (V) 300 1 3 —— 100 150 30 IC (mA) Ta 0.20 0.15 0.10 0.05 0.00 0.3 1 REVERSE BIAS VOLTAGE 10 3 V (V) GUANGDONG HOTTECH 0 25 50 75 AMBIENT TEMPERATURE INDUSTRIAL CO., LTD 100 Ta 125 150 (℃ ) Page:P2-P2