D882

Plastic-Encapsulate Transistors FEATURES D882(NPN) Power dissipation Marking : 882 MAXIMUM RATINGS (TA=25 Parameter unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 3000 mA Collector Power Dissipation PC 500 mW Tstg -55-150 Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol 1. BASE 2. COLLECTO SOT-89 3. EMITTER unless otherwise specified) Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC = 100μA, IE=0 40 V Collector-emitter breakdown voltage VCEO IC = 10mA, IB=0 30 V Emitter-base breakdown voltage VEBO IE= 100μA, IC=0 6 V Collector cut-off current ICBO VCB= 40V, IE=0 1 µA Collector cut-off current ICEO VCE= 30V, IB=0 10 µA Emitter cut-off current IEBO VEB= 6V, IC=0 1 µA DC current gain hFE(1) VCE=2V, IC= 1A 60 hFE(2) VCE=2V, IC= 100mA 32 400 Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A 0.5 V Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A 1.5 V fT Transition frequency VCE= 5V , Ic=0.1A 50 MHz f =10MHz CLASSIFICATION OF HFE Rank R Range 60-120 GUANGDONG HOTTECH O 100-200 Y 160-320 INDUSTRIAL CO., LTD GR 200-400 Page:P2-P1 Plastic-Encapsulate Transistors D882 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2