KTA1298-IY

Plastic-Encapsulate Transistors FEATURES KTA1298 (PNP) Low frequency power amplifier application Power switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -800 mA 1. BASE Collector Power Dissipation PC 200 mW 2. EMITTER Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 SOT-23 3. COLLECTO unless otherwise specified) Parameter Symbol Collector-base breakdown voltage VCBO IC=- 1mA,IE=0 -35 V Collector-emitter breakdown voltage VCEO IC= -10mA, IB=0 -30 V Emitter-base breakdown voltage VEBO IE=-1mA, IC=0 -5 V Collector ICBO VCB=-30 V,IE=0 -0.1 μA IEBO VEB= -5V,IC=0 -0.1 μA hFE(1) VCE=-1V, IC=-100mA 100 hFE(2) VCE=-1V, IC=-800mA 40 Emitter DC cut-off cut-off current current current VCE(sat) Base- emitter voltage frequency Collector output capacitance CLASSIFICATION OF Marking Range conditions Min Typ Max Unit 320 gain Collector-emitter saturation voltage Transition Test IC=-500mA, IB= -20mA VBE VCE=-1V, IC=-10mA fT VCE=-5V, IC=-10mA, Cob VCB=-10V, IE=0,f=1MHz -0.5 -0.4 V -0.8 V 120 MHz 13 pF hFE IO IY 100-200 160-320 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors KTA1298 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2