KTA1504-ASY

Plastic-Encapsulate Transistors FEATURES KTA1504(PNP) • Complementary To KTC3875. • Excellent HFELinearity. • Low noise. Maximum Ratings (TA=25 Parameter unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0. 15 A Collector Power dissipation PC 0.15 W Junction Temperature TJ 150 Storage Temperature Tstg -55to +150 ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol 1. BASE SOT-23 2. EMITTER 3. COLLECTO unless otherwise specified) Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-100μA,IE=0 -50 V Collector-emitter breakdown voltage VCEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage VEBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-2mA Collector-emitter saturation voltage Transition frequency VCE(sat) fT Collector output capacitance Cob Noise figure NF 70 IC=-100mA, IB=-10mA VCE=-10V, IC= -1mA 400 -0.1 -0.3 V 80 VCB=-10V,IE=0,f=1MHz VCE=-6V,IC=-0.1mA, F=1KHz,Rg=10KΩ MHz 4.0 7.0 pF 1.0 10 dB CLASSIFICATION OF hFE Rank O Y Range 70-140 120-240 Marking ASO ASY GUANGDONG HOTTECH INDUSTRIAL CO., LTD G 200-400 ASG Page:P2-P1 Plastic-Encapsulate Transistors KTA1504 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2