MMBTA42

Plastic-Encapsulate Transistors FEATURES MMBTA42(NPN) High breakdown voltage Low collector-emitter saturation voltage Complementary to MMBTA92 (PNP) MARKING: 1D Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 300 V 1. BASE Collector-Emitter Voltage VCEO 300 V 2. EMITTER Emitter-Base Voltage VEBO 5 V 3. COLLECTO Collector Current -Continuous IC 0.3 A Collector Power dissipation PC 0.35 W RӨJA 357 /mW Junction Temperature TJ 150 Storage Temperature Tstg Thermal Resistance, junction to Ambient ELECTRICAL CHARACTERISTICS ( @ Ta=25 SOT-23 -55to +150 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC= 100μA, Collector-emitter breakdown voltage VCEO IC= 1mA, IB=0 Emitter-base breakdown voltage VEBO IE= 100μA, IC=0 Collector cut-off current ICBO VCB=200V, IE=0 0.25 μA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA IE=0 Min Max Unit 300 V 300 V 5 V hFE(1) VCE= 10V, IC= 1mA 60 hFE(2) VCE= 10V, IC=10mA 100 hFE(3) VCE=10V, IC=30mA 60 Collector-emitter saturation voltage VCE(sat) IC=20mA, IB= 2mA 0.2 V Base-emitter saturation voltage VBE(sat) IC= 20mA, IB=2mA 0.9 V DC current gain Transition frequency fT VCE= 20V, IC= 10mA, 50 200 MHz f=30MHz GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors MMBTA42 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2