MMBTA44

Plastic-Encapsulate Transistors FEATURES MMBTA44(NPN) High Breakdown Voltage Complement to MMBTA94 Marking : 3D MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 400 V DCollector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 200 mA Collector Current -Pulsed ICM 300 mA Collector Power Dissipation PC 350 mW RΘJA 357 /W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Thermal Resistance From Junction To Ambient ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions 1. BASE SOT-23 2. EMITTER 3. COLLECTO Min Typ Max Unit Collector-base breakdown voltage VCBO IC=100µA, IE=0 400 V Collector-emitter breakdown voltage VCEO IC=1mA, IB=0 400 V Emitter-base breakdown voltage VEBO IE=10µA, IC=0 6 V Collector cut-off current ICBO VCB=400V, IE=0 0.1 µA Collector cut-off current ICEO VCE=400V, IB=0 5 µA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 µA hFE(1) VCE=10V, IC=1mA 40 hFE(2) VCE=10V, IC=10mA 50 hFE(3) VCE=10V, IC=50mA 45 hFE(4) VCE=10V, IC=100mA 40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage 200 VCE(sat)1 IC=1mA, IB=0.1mA 0.4 V VCE(sat)2 IC=10mA, IB=1mA 0.5 V VCE(sat)3 IC=50mA, IB=5mA 0.75 V VBE(sat) IC=10mA, IB=1mA 0.75 V Collector output capacitance Cob VCB=20V, IE=0, f=1MHz 7 PF Emitter input capacitance Cib VEB=0.5V, IC=0, f=1MHz 130 PF GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors MMBTA44 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2