MMBTA92

Plastic-Encapsulate Transistors FEATURES MMBTA92 High voltage transistor (PNP) MARKING: 2D MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -500 mA Collector Power Dissipation PC 0.3 W Junction Temperature TJ 150 Storage Temperature Tstg -55 to +150 Thermal Resistance, junction to Ambient RӨJA 410 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 1. BASE SOT-23 2. EMITTER 3. COLLECTO ℃/mW unless otherwise specified) Symbol Test conditions Min Max Unit Collector-base breakdown voltage VCBO IC= -100μA, IE=0 -300 V Collector-emitter breakdown voltage VCEO IC= -1mA, IB=0 -300 V Emitter-base breakdown voltage VEBO IE= -100μA, IC=0 -5 V Collector cut-off current ICB VCB=-200V, IE=0 -0.25 μA Emitter cut-off current O IEB VEB= -5V, IC=0 -0.1 μA DC current gain O hFE(1) VCE= -10V, IC= -1mA 60 hFE(2) VCE= -10V, IC=-10mA 100 hFE(3) VCE= -10V, IC=-30mA 60 200 Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB= -2mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20mA, IB= -2mA -0.9 V Transition frequency fT GUANGDONG HOTTECH VCE=-20V, IC= -10mA 50 MHz f=30MHz INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors MMBTA92 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2