Plastic-Encapsulate Transistors
FEATURES
MMBTH10 (NPN)
VHF/UHF Transistor
MARKING: 3EM
MAXIMUM RATINGS (TA=25
Symbol
unless otherwise noted)
Value
Unit
VCBO
Collector-Base Voltage
Parameter
30
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current
50
mA
PC
Collector Power Dissipation
225
mW
Thermal Resistance From Junction To Ambient
556
℃/W
1. BASE
RΘJA
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25
Parameter
SOT-23
2. EMITTER
3. COLLECTO
unless otherwise specified)
Symbol
Test conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
IC=100µA, IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=1mA, IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=10µA, IC=0
3
V
Collector cut-off current
ICBO
VCB=25V, IE=0
0.1
µA
Emitter cut-off current
IEBO
VEB=2V, IC=0
0.1
µA
DC current gain
hFE
VCE=10V, IC=4mA
VCE(sat)
IC=4mA, IB=0.4mA
0.5
V
Base-emitter voltage
VBE
VCE=10V, IC=4mA
0.95
V
Transition frequency
fT
Collector-emitter saturation voltage
Collector output capacitance
Cob
GUANGDONG HOTTECH
VCE=10V,IC=4mA
f=100MHz
VCB=10V, IE=0, f=1MHz
INDUSTRIAL CO., LTD
60
650
MHz
0.7
pF
Page:P2-P1
Plastic-Encapsulate Transistors
MMBTH10 Typical
Characteristics
hFE
Static Characteristic
1000
10
COLLECTOR CURRENT IC (mA)
IC
COMMON EMITTER
VCE=10V
COMMON
EMITTER
Ta=25℃
8
——
50uA
DC CURRENT GAIN hFE
45uA
40uA
6
35uA
30uA
4
25uA
20uA
Ta=100℃
Ta=25℃
100
15uA
2
10uA
IB=5uA
0
10
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCEsat
1
——
10
VCE
12
1
50
COLLECTOR CURRENT
IC
VBEsat
1.0
IC
——
(mA)
IC
β=10
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
β=10
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
10
(V)
0.1
Ta=100℃
Ta=25℃
0.01
0.1
1
10
COLLECTOR CURRENT
IC
——
IC
0.8
Ta=25℃
Ta=100℃
0.6
0.4
0.1
50
1
(mA)
10
COLLECTOR CURRENT
Cob/ Cib
VBE
——
f=1MHz
IE=0/IC=0
Ta=25℃
Ta=100℃
10
CAPACITANCE C (pF)
COLLECTOR CURRENT IC (mA)
COMMON EMITTER
VCE=10V
Ta=25℃
1
0.1
0.2
0.4
0.6
0.8
Cib
1
Cob
0.1
0.1
1.0
TRANSITION FREQUENCY fT (MHz)
——
REVERSE VOLTAGE
IC
PC
270
COLLECTOR POWER DISSIPATION
PC (mW)
fT
3
1
0.3
BASE-EMMITER VOLTAGE VBE (V)
1200
50
(mA)
VCB/ VEB
10
50
IC
900
600
300
COMMON EMITTER
VCE=10V
——
V
10
20
(V)
Ta
225
180
135
90
45
Ta=25℃
0
1
0
3
COLLECTOR CURRENT
10
IC
(mA)
GUANGDONG HOTTECH
0
25
50
75
AMBIENT TEMPERATURE
INDUSTRIAL CO., LTD
100
Ta
125
150
(℃ )
Page:P2-P2
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