MMBTH10

Plastic-Encapsulate Transistors FEATURES MMBTH10 (NPN) VHF/UHF Transistor MARKING: 3EM MAXIMUM RATINGS (TA=25 Symbol unless otherwise noted) Value Unit VCBO Collector-Base Voltage Parameter 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 3 V IC Collector Current 50 mA PC Collector Power Dissipation 225 mW Thermal Resistance From Junction To Ambient 556 ℃/W 1. BASE RΘJA Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55～+150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter SOT-23 2. EMITTER 3. COLLECTO unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA, IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=10µA, IC=0 3 V Collector cut-off current ICBO VCB=25V, IE=0 0.1 µA Emitter cut-off current IEBO VEB=2V, IC=0 0.1 µA DC current gain hFE VCE=10V, IC=4mA VCE(sat) IC=4mA, IB=0.4mA 0.5 V Base-emitter voltage VBE VCE=10V, IC=4mA 0.95 V Transition frequency fT Collector-emitter saturation voltage Collector output capacitance Cob GUANGDONG HOTTECH VCE=10V,IC=4mA f=100MHz VCB=10V, IE=0, f=1MHz INDUSTRIAL CO., LTD 60 650 MHz 0.7 pF Page:P2-P1 Plastic-Encapsulate Transistors MMBTH10 Typical Characteristics hFE Static Characteristic 1000 10 COLLECTOR CURRENT IC (mA) IC COMMON EMITTER VCE=10V COMMON EMITTER Ta=25℃ 8 —— 50uA DC CURRENT GAIN hFE 45uA 40uA 6 35uA 30uA 4 25uA 20uA Ta=100℃ Ta=25℃ 100 15uA 2 10uA IB=5uA 0 10 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat 1 —— 10 VCE 12 1 50 COLLECTOR CURRENT IC VBEsat 1.0 IC —— (mA) IC β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) β=10 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 10 (V) 0.1 Ta=100℃ Ta=25℃ 0.01 0.1 1 10 COLLECTOR CURRENT IC —— IC 0.8 Ta=25℃ Ta=100℃ 0.6 0.4 0.1 50 1 (mA) 10 COLLECTOR CURRENT Cob/ Cib VBE —— f=1MHz IE=0/IC=0 Ta=25℃ Ta=100℃ 10 CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) COMMON EMITTER VCE=10V Ta=25℃ 1 0.1 0.2 0.4 0.6 0.8 Cib 1 Cob 0.1 0.1 1.0 TRANSITION FREQUENCY fT (MHz) —— REVERSE VOLTAGE IC PC 270 COLLECTOR POWER DISSIPATION PC (mW) fT 3 1 0.3 BASE-EMMITER VOLTAGE VBE (V) 1200 50 (mA) VCB/ VEB 10 50 IC 900 600 300 COMMON EMITTER VCE=10V —— V 10 20 (V) Ta 225 180 135 90 45 Ta=25℃ 0 1 0 3 COLLECTOR CURRENT 10 IC (mA) GUANGDONG HOTTECH 0 25 50 75 AMBIENT TEMPERATURE INDUSTRIAL CO., LTD 100 Ta 125 150 (℃ ) Page:P2-P2