PXT8050

Plastic-Encapsulate Transistors FEATURES PXT8050 (NPN) Complimentary to PXT8550 Collector current: IC=1.5A MARKING: Y1 MAXIMUM RATINGS (TA=25 Parameter unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1500 mA Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol 1. BASE SOT-89 2. COLLECTO 3. EMITTER unless otherwise specified) Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage VCEO IC= 0.1mA, IB=0 25 V Emitter-base breakdown voltage VEBO IE= 100μA, IC=0 5 V Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μA Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μA Emitter cut-off current IEBO VEB= 5V, 0.1 μA hFE(1) VCE= 1V, hFE(2) VCE= 1V, Collector-emitter saturation voltage VCE(sat) IC=800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB=80mA 1.2 V Base-emitter voltage VBE VCE=1V, IC=10mA 1 V IC=0 IC= 100mA 85 400 DC current gain IC= 800mA Base-emitter positive favor voltage VBEF IB=1A Transition frequency fT VCE=10V,IC=50mA,f=30MHz output capacitance Cob VCB=10V,IE=0,f=1MHz CLASSIFICATION OF 40 100 1.55 V 5 MHz 15 pF HFE Rank B C D D3 Range 85-160 120-200 160-300 300-400 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors PXT8050 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2