PXT8550

Plastic-Encapsulate Transistors FEATURES PXT8550 (PNP) Complimentary to PXT8050 Collector current: IC=1.5A MARKING: Y2 MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1500 mA Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Tstg -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter 1. BASE 2. COLLECTO SOT-89 3. EMITTER unless otherwise specified) Symbol Test conditions Min Max Unit Collector-base breakdown voltage V(BR)CBO IC= -100μA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -40 V,IE=0 -0.1 μA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 μA Emitter cut-off current IEBO VEB= -5V, IC=0 -0.1 μA hFE(1) VCE= -1V, IC= -100mA 85 hFE(2) VCE= -1V, IC= -800mA 40 Collector-emitter saturation voltage VCE(sat) IC=-800mA, IB= -80mA -0.5 V Base-emitter saturation voltage VBE(sat) IC=-800mA, IB= -80mA -1.2 V Base-emitter on voltage VBE(on) Ic=-1V,VCE=-10mA -1 V -1.55 V DC current gain Base-emitter positive favor voltage Transition frequency output capacitance CLASSIFICATION OF VBEF IB=-1A fT VCE= -10V, IC= -50mA Cob VCB=-10V,IE=0,f=1MHz 400 100 MHz 20 pF HFE Rank B C D D3 Range 85-160 120-200 160-300 300-400 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors PXT8550 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2