SS56BF

Plastic-Encapsulate Diodes SS52BF---SS520BF FEATURES Cathode Band Top View Metal silicon junction,majority carrier conduction For surface mounted applications Low power loss,high efficiency High forward surge current capability For use in low voltage,high frequency inverters, free wheeling,and polarity protection applicatlons 0.146(3.70) 0.138(3.50) 0.086(2.20) 0.075(1.90) 0.173(4.4) 0.165(4.2) 0.010(0.26) 0.0071(0.18) 0.051(1.30) 0.043(1.10) 0.051(1.30) 0.039(1.0) MECHANICAL DATA Case: JEDEC SMBF molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight:57mg/0.002oz 0.216(5.5) 0.200(5.1) Dimensions in inches and (millimeters) SMBF MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL(see fig.1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 5.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=100 C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction temperature range Storage temperature range SYMBOLS SS52BF SS54BF VRRM VRMS VDC 20 14 20 40 28 40 SS56BF SS58BF 60 42 60 SS510BF 80 56 80 100 70 100 SS515BF SS520BF 150 105 150 200 140 200 UNITS VOLTS VOLTS VOLTS I(AV) 5.0 Amp IFSM 150.0 Amps VF 0.45 IR CJ RθJA TJ, TSTG 800 0.55 0.70 0.85 1.0 50 500 40.0 -50 to +125 -50 to +150 0.95 Volts mA pF C/W C C Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 2.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Diodes SS52BF---SS520BF Fig.2 Typical Reverse Characteristics Average Forward Current (A) 6.0 100LFM 5.0 4.0 3.0 2.0 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas 1.0 0.0 25 50 75 100 125 150 Instaneous Reverse Current ( μA) Fig.1 Forward Current Derating Curve 10 4 T J =100°C 10 3 10 1 T J =25°C 10 0 0 Lead Temperature (°C) 60 100 80 Fig.4 Typical Junction Capacitance T J =25°C Junction Capacitance ( pF) 20 10 1 SS52BF SS54BF SS56BF/SS58BF SS510BF/SS520BF 0.1 0 0.5 1.0 1.5 100 SS52BF/SS54BF SS54F/SS520F SS56BF-SS520BF 20 10 0.1 10 1 100 Reverse Voltage (V) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current Fig.6- Typical Transient Thermal Impedance 150 125 100 75 50 8.3 ms Single Half Sine Wave (JEDEC Method) 00 1 500 Instaneous Forward Voltage (V) 175 25 1000 2.0 10 Number of Cycles at 60Hz GUANGDONG HOTTECH 100 Transient Thermal Impedance（ °C /W） Instaneous Forward Current (A) 40 20 Percent of Rated Peak Reverse Voltage（%） Fig.3 Typical Forward Characteristic Peak Forward Surage Current (A) T J =75°C 10 2 100 10 1 0.01 0.1 1 10 100 t, Pulse Duration（sec） INDUSTRIAL CO., LTD Page:P2-P2