2SA1213

2SA1213 BIPOLAR TRANSISTOR (PNP) FEATURES  Complementary to 2SC2873  Power Amplifier and Switching Application  Low Saturation Voltage  High Speed Switching Time  Surface Mount device SOT-89 MECHANICAL DATA     Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Symbol VCBO VCEO VEBO Thermal Resistance From Junction To Ambient Junction Temperature IC PC RθJA TJ Value -50 -50 -5 -2 500 250 150 Unit V V V A mW °C/W °C Storage Temperature TSTG -55 ~+150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min V(BR)CBO -50 V IC=-100uA，IE=0 Collector-emitter breakdown voltage V(BR)CEO -50 V IC=-10mA，IB=0 Emitter-base breakdown voltage -5 V IE=-100uA，IC=0 Collector-base breakdown voltage V(BR)EBO Typ Max Unit Conditions Collector cut-off current ICBO -0.1 uA VCB=-50V, IE=0 Emitter cut-off current IEBO hFE1 hFE2 -0.1 240 uA VEB=-5V, IC=0 VCE=-2V, IC=-500mA VCE=-2V, IC=2A VCE(sat) -0.5 V IC=-1A，IB=-50mA Base-emitter voltage VBE -1.2 V IC=-1A，IB=-50mA Transition frequency fT MHz VCE=-2V, IC=-0.5A DC current gain Collector-emitter saturation voltage Collector output capacitance CLASSIFICATION OF hFE 70 20 100 Cob 40 pF VCB=-10V, IE=0, f=1MHz Rank O Y Range 70-140 120-240 Marking NO NY © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 1/4 2SA1213 BIPOLAR TRANSISTOR (PNP) Typical Characteristics Static Characteristic -1000 -5.4mA -800 —— IC COMMON EMITTER VCE=-2V -4.8mA 300 -4.2mA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) -6mA hFE 1000 COMMON EMITTER Ta=25 ℃ -3.6mA -600 -3mA -2.4mA -400 -1.8mA -1.2mA -200 Ta=100 ℃ Ta=25 ℃ 100 30 IB=-600uA -0 -0.0 10 -0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR-EMITTER VOLTAGE —— -3.0 -3.5 IC β=20 -10 -3 COLLECTOR CURRENT IC -1000 —— -300 -100 -30 -10 IC -100 -30 VCEsat -1000 Ta=100 ℃ -200 -1 -3 COLLECTOR CURRENT Ta=25 ℃ BASE-EMMITTER SATURATION VOLTAGE VBEsat (mV) -1 (V) COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) VBEsat -1000 VCE —— -2000 (mA) IC -300 -100 Ta=100 ℃ -30 Ta=25 ℃ -10 -1000 -1 -30 -10 Cob/Cib 1000 —— -300 -100 COLLECTOR CURRENT (mA) VBE -1000 -500 IC IC -1000 (mA) VCB/VEB f=1MHz IE=0/IC=0 Ta=25 ℃ 300 -100 Ta=100 ℃ -30 Ta=25 ℃ -10 Cib 100 Cob 30 -3 -1 -0.0 VCE=-2V -0.2 -0.4 -0.6 BASE-EMITTER VOLTAGE PC 600 COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) COLLECTOR CURRENT IC (mA) -300 —— -0.8 VBE -1.0 10 -0.1 -1 -0.3 -10 -3 REVERSE VOLTAGE (V) V -20 (V) Ta 500 400 300 200 100 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta © SHENZHEN HOTTECH ELECTRONICS CO.,LTD 125 150 (℃ ) E-mail:hkt@heketai.com 2/4 2SA1213 BIPOLAR TRANSISTOR (PNP) SOT-89 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 D1 1.550REF 0.061REF E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e 1.500TYP 0.060TYP e1 3.000TYP 0.118TYP L 0.900 1.200 0.035 0.047 SOT-89 Suggested Pad Layout Note: 1.Controlling dimension: in millimeters 2.General tolerance: ±0.05mm 3.The pad layout is for reference purposes only © SHENZHEN HOTTECH ELECTRONICS CO.,LTD E-mail:hkt@heketai.com 3/4 2SA1213 BIPOLAR TRANSISTOR (PNP) SOT-89 Tape and Reel SOT-89 Embossed Carrier Tape DIMENSIONS ARE IN MILLIMETER TYPE A B C d E F P0 P P1 W SOT-89 4.85 4.45 1.85 Ø1.50 1.75 5.50 4.00 8.00 2.00 12.00 TOLERANCE ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 ±0.1 SOT-89 Tape Leader and Trailer SOT-89 Reel DIMENSIONS ARE IN MILLIMETER REEL OPTION 7’’ DIA TOLERANCE D D1 D2 G H I W1 W2 Ø178 54.40 13.00 R78 R25.60 R6.50 13.20 16.50 ±2 ±1 ±1 ±1 ±1 ±1 ±1 ±1 E-mail:hkt@heketai.com 4/4