2SA1797-AGQ

Plastic-Encapsulate Transistors FEATURES 2SA1797 (PNP) • Low saturation voltage • Excellent DC current gain characteristics • Complements to 2SC4672 Maximum Ratings (Ta=25 Parameter unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -6 V IC -2 A Collector Current -Continuous PC 0.5 Junction Temperature TJ 150 Storage Temperature Tstg -55to +150 Collector Power dissipation ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol W 1. BASE SOT-89 2. COLLECTO 3. EMITTER unless otherwise specified) Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=-50μA, IE=0 -50 V Collector-emitter breakdown voltage VCEO IC=-1mA, IB=0 -50 V Emitter-base breakdown voltage VEBO IE=-50μA, IC=0 -6 V Collector cut-off current ICBO VCB=-50V, IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 μA DC current gain hFE VCE=-2V, IC=-500mA Collector-emitter saturation voltage VCE(sat) 82 270 IC=-1A, IB=-50mA Transition frequency fT VCE=-2V, IC=-0.5A, f=100MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz -0.35 V 200 MHz 36 pF CLASSIFICATION OF hFE Rank P Q Range 80-180 120-270 AGP AGQ Marking GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SA1797 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2