2SB1260-ZL

Plastic-Encapsulate Transistors FEATURES 2SB1260(PNP) • High breakdown voltage and high current. BVCEO=-80V,IC=-1A • Good hFEVLinearity. • Low VCE(sat). • Complements the 2SD1898. Marking: ZL Maximum Ratings (Ta=25 unless otherwise noted) Parameter Collector-Base Voltage Symbol Value Unit VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1 A Collector Power dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Tstg -55to +150 ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Collector-base breakdown Collector-emitter Emitter-base Collector breakdown breakdown cut-off Emitter cut-off DC current voltage voltage current current gain Collector-emitter Transition voltage saturation frequency voltage 1. BASE 2. COLLECTO SOT-89 3. EMITTER unless otherwise specified) Typ Symbol Test conditions Min VCBO IC=-50μA IE=0 -80 V VCEO IC=-1mA IB=0 -80 V VEBO IE=-50μA IC=0 -5 V ICBO VCB=-60V IEBO VEB=-4V,IC=0 hFE VCE=-3V VCE(sat) IC=-500mA fT IE=0 IC=-100 mA 82 Max -1 μA -1 μA 390 IB=-50mA -0.4 VCE=-5V,IC=-50mA, Unit V 100 MHz 25 pF f=30MHz Output Capacitance Cobo GUANGDONG HOTTECH VCB=-10V f=1.0MHz IE=0 - INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SB1260 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2