2SC3357-RE

Plastic-Encapsulate Transistors 2SC3357 (NPN) DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. 1. BASE 2. COLLECTO SOT-89 3 EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation @TC=25℃ 1.2 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4 -P1 Plastic-Encapsulate Transistors 2SC3357 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1.0 μA hFE DC Current Gain IC= 20mA ; VCE= 10V Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V 6.5 Feed-Back Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.65 Insertion Power Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 9 dB NF Noise Figure IC= 7mA ; VCE= 10V;f= 1.0GHz 1.1 dB NF Noise Figure IC= 40mA ; VCE= 10V;f= 1.0GHz 1.8 fT Cre ︱S21e︱2 ‹ PARAMETER 50 300 GHz 1.0 3.0 pF dB hFE Classification Marking RH RF RE hFE 50-100 80-160 125-250 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4 -P2 Plastic-Encapsulate Transistors 2SC3357 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4 -P3 Plastic-Encapsulate Transistors 2SC3357 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P4 -P4