2SC2873-MY

Plastic-Encapsulate Transistors FEATURES 2SC2873 (NPN) • Small flat package. • Low saturation voltage VCE(sat)=-0.5V • High speed switching time • PC=1.0 to 2.0W • Complementary to 2SA1213 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 2 A Collector Power dissipation PC Junction Temperature TJ 150 Storage Temperature Tstg -55to +150 1. BASE SOT-89 2. COLLECTO 3. EMITTER 0.5 1 (1) W Note (1):Mounted on a ceramic substrate(250mm2*0.8t) ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter unless otherwise specified) Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V Collector cut-off current ICBO VCB=50V,IE=0 0.1 µA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA hFE(1) VCE=2V, IC=0.5A 70 hFE(2) VCE=2V, IC=2A 20 Collector-emitter saturation voltage VCE(sat) IC=1A,IB=50mA Base-emitter saturation voltage VBE(sat) IC=1A,IB=50mA fT VCE=2V,IC=0.5A DC current gain Transition frequency Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 240 0.5 1.2 V V 120 MHz 30 pF CLASSIFICATION OF hFE Rank O Y Range 70-140 120-240 MO MY Marking GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SC2873 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2