2SC4672

Plastic-Encapsulate Transistors FEATURES 2SC4672 (NPN) • Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. • Excellent DC current gain characteristics. • Complements the 2SA1797. Maximum Ratings (Ta=25 Parameter unless otherwise noted) Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 2 A Collector Power dissipation PC 0.5 W Tstg -55to +150 1. BASE SOT-89 2. COLLECTO Storage Temperature ELECTRICAL CHARACTERISTICS ( @ Ta=25 Parameter Symbol 3. EMITTER unless otherwise specified) Test conditions Min Typ Max Unit Collector-base breakdown voltage VCBO IC=50μA,IE=0 60 V Collector-emitter breakdown voltage VCEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage VEBO IE=50μA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=2V,IC=0.5A VCE(sat) IC=1A,IB=50mA Collector-emitter saturation voltage Transition frequency fT VCE=2V,IC=500mA,f=100MHz Collector output capacitance Cob VCB=10V,IE=0,f=1MHz 82 270 0.35 V 210 MHz 25 pF CLASSIFICATION OF hFE Rank P Q Range 80-180 KDP 120-270 DKQ Marking GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Transistors 2SC4672 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2