2SD1007 HQ

Plastic-Encapsulate Transistors 2SD1007 (NPN) Features High collector to emitter voltage: VCEO 120V. Absolute Maximum Ratings Ta = 25 1. BASE Parameter Symbol Rating Unit VCBO 120 V SOT-89 2. COLLECTO Collector-base voltage 3. EMITTER 120 V Collector-emitter voltage VCEO Emitter-base voltage VEBO 5 IC 0.7 A Collector current (pulse) * IC (pu) 1.2 A Collector power dissipation Pc 2 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector current V W *. PW 10ms,duty cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Base-emitter voltage * VBE VCE =10V , IC = 10mA Min Typ Max Unit 550 620 650 mV Collector cutoff current ICBO VCB = 120V, IE=0 100 nA Emitter cutoff current IEBO VEB = 5V, IC=0 100 nA DC current gain * hFE VCE =1V , IC = 5.0mA 45 200 VCE =1V , IC = 100mA 90 200 400 Collector-emitter saturation voltage * VCE(sat) IC = 500mA , IB = 50mA 0.3 0.6 V Base-emitter saturation voltage * VBE(sat) IC = 500mA , IB = 50mA 0.9 1.5 V Output capacitance Cob Transition frequency fT *. PW VCB = 10V , IE = 0 , f = 1.0MHz 10 pF VCE = 10V , IE = -10mA 90 MHz 350ìs,duty cycle 2% hFE Classification Marking HR HQ HP hFE 90 180 135 270 200 400 GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P1-P1