RB520S-30-B

Plastic-Encapsulate Diodes Schottky barrier diode RB520S-30 FEATURES Small surface mounting type + Low reverse current and low forward voltage High reliability - MARKING: B SOD-523 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Symbol Limits Unit DC reverse voltage VR 30 V Mean rectifying current IO 200 mA IFSM 1 A Junction temperature Tj 125 ℃ Storage temperature Tstg -40-125 ℃ Peak forward surge current ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Min. Typ. Max. Unit Conditions Forward voltage VF 0.6 V IF=200mA Reverse current IR 1 μA VR=10V GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P1 Plastic-Encapsulate Diodes RB520S-30 Typical Characteristics GUANGDONG HOTTECH INDUSTRIAL CO., LTD Page:P2-P2