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GS4157-CR

GS4157-CR

  • 厂商:

    GAINSIL(聚洵)

  • 封装:

    SC706

  • 描述:

    3-ohms@2.7V 1.65V~5.5V

  • 详情介绍
  • 数据手册
  • 价格&库存
GS4157-CR 数据手册
GS4157/4157B Low-Voltage, 2.8Ω SPDT Analog Switch General Description Features The GS4157/4157B is a high-bandwidth, fast single-pole double-throw (SPDT) CMOS switch. It can be used as an analog switch or as a lowdelay bus switch. Specified over a wide operating power supply voltage range, 1.65V to 5.5V, the GS4157/4157B has a maximum ON resistance of 5.1-ohms at 1.65V, 3.9-ohms at 2.3V & 2.85-ohms at 4.5V. Break-beforemake switching prevents both switches being enabled simultaneously. This eliminates signal disruption during switching. ♦CMOS Technology for Bus and Analog Applications ♦ Low ON Resistance: 3-ohms @ 2.7V ♦ Wide VCC Range: 1.65V to 5.5V ♦ Rail-to-Rail Signal Range ♦ Control Input Overvoltage Tolerance: 5.5V min. ♦ High Off Isolation: 57dB at 10MHz ♦ 54dB (10MHz) Crosstalk Rejection Reduces Signal Distortion ♦ Break-Before-Make Switching ♦ High Bandwidth: 300 MHz ♦ Extended Industrial Temperature Range: –40°C to 85°C ♦ Improved Direct Replacement for NC7SB4157 ♦ Packaging (Pb-free & Green available): The control input, S, tolerates input drive signals up to 5.5V, independent of supply voltage. GS4157/4157B is an improved direct replacement for the FSA4157/NC7SB4157 Applications Cell Phones PDAs Portable Instrumentation Battery Powered Communications Computer Peripherals Pin Description Connection Diagram(Top View) Name S Logic Control Vcc SC70-6 Description Positive Power Supply A Common Output/Data Port B0 Data Port (Normally Closed) GND B1 Ground Data Port Logic Function Table TDFN-6 S 1 6 B1 VCC 2 5 GND A 3 4 B0 Logic Input (S) Function 0 B0 Connected to A 1 B1 Connected to A ORDERING INFORMATION Ordering Code Package Description Temp Range Top Marking GS4157EXT-TR 6-pin SC70 –40°C to +85°C ABG GS4157BEXT-TR 6-pin TDFN 1.45X1 –40°C to +85°C ABG GS4157/4157B Low-Voltage, 2.8Ω SPDT Analog Switch ABSOLUTE MAXIMUM RATINGS (1) Supply Voltage VCC.........................................–0.5V to +7V DC Switch Voltage (VS) (2).…….......…..–0.5V to VCC +0.5V (2) DC Input Voltage (VIN) .…..…….....….......–0.5V to +7.0V DC VCC or Ground Current (ICC/IGND)..................±100mA DC Output Current (VOUT) .......................................128mA Storage Temperature Range (TSTG) ....... –65°C to +150°C Junction Temperature under Bias (TJ) .......…............ 150°C Junction Lead Temperature (TL) (Soldering, 10 seconds) .................................... 260°C Power Dissipation (PD) @ +85°C .............................180mW RECOMMENDED OPERATING CONDITIONS (3) Supply Voltage Operating (VCC)………………1.65V to 5.5V Control Input Voltage (VIN)………………………..0V to VCC Switch Input Voltage (VIN)…………………………0V to VCC Output Voltage (VOUT)…………………………….0V to VCC Operating Temperature (TA)………………...–40°C to +85°C Thermal Resistance (θJA)…………………………..350°C/W Note 1:Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Note 2:The input and output negative voltage ratings may be exceeded if the input and output diode current ratings are observed. Note 3:Control input must be held HIGH or LOW; it must not float. DC ELECTRICAL CHARACTERISTICS (TA = - 40°C to +85°C) Parameter Description VIAR Analog Input Signal Range Test Conditions Supply Voltage Temp (ºC) Min. VCC TA = 25°C & –40°C to 85°C 0 Typ Max. Unit s VCC V 4.5 Ω RON ON Resistance(4) Iout = 100mA, B0 or B1=1.5V 2.7V TA = 25°C RON ON Resistance(4) Iout = 100mA, B0 or B1=3.5V 4.5V TA = 25°C Iout = 100mA, B0=B1=1.5V 2.7V TA = 25°C 0.75 Ω I(A) = -100mA; B0 or B1= 0V, 1.5V, 1.5V 2.7V TA = 25°C 1.5 Ω I(A) = -100mA; B0 or B1= 0V, 1.5V, 3.0V, 4.5V TA = 25°C 0.5 Ω ∆RON RONF ON Resistance Match Between Channels(4,5,6) ON Resistance(4,5, 7) Flatness RONF ON Resistance(4,5, 7) Flatness VIH VIL Input High Voltage Input Low Voltage Logic High Level Logic Low Level VCC = 1.65V to 1.95V VCC = 2.3V to 5.5V VCC = 1.65V to 1.95V VCC = 2.3V to 5.5V 3 3 1.5 TA = 25°C & –40°C to 85°C V 1.7 0.5 V 0.8 GS4157/4157B Low-Voltage, 2.8Ω SPDT Analog Switch DC ELECTRICAL CHARACTERISTICS (TA = - 40°C to +85°C) IIN Input Leakage Current IOFF OFF State Leakage Current ICC Quiescent Supply Current VCC = 0V to 5.5V 0 ≤VIN ≤5.5V VCC = 5.5V A=1V,4.5V, B0 or B1=4.5V, 1V All channels ON or OFF, VIN = VCC or GND, IOUT = 0 VCC = 5.5V TA = 25°C ±0.1 TA = –40°C to 85°C ±1.0 TA = 25°C -2.0 2.0 TA = 25°C µA 1 TA = –40°C to 85°C 10 Note 4: Measured by voltage drop between A and B pins at the indicated current through the device. ON resistance is determined by the lower of the voltages on two ports (A or B) Note 5: Parameter is characterized but not tested in production. Note 6: DRON = RON max – RON min. measured at identical VCC, temperature and voltage levels. Note 7: Flatness is defined as difference between maximum and minimum value of ON resistance over the specified range of conditions.. Note 8: Guaranteed by design. CAPACITANCE Parameter CIN CIO-B (12) Test Conditions Description Supply Voltage Temp (ºC) Min. Control Input Typ Max. Units 2.3 VCC = 5.0V For B Port,Switch OFF TA = 25°C pF 6.5 f= 1 MHz(12) CIOA-ON For A Port, Switch ON 18.5 SWITCH AND AC CHARACTERISTICS Parameter Description Test Conditions tPLH tPHL Propagation Delay: A to Bn See test circuit diagrams 1 and 2. VI Open (10) Supply Voltage Temp (ºC) Min. VCC= 2.3V to 2.7V VCC = 3.0V to 3.6V TA = 25°C & –40 to 85°C tPZL tPZH 0.8 7 23 3.5 13 VCC= 3.0V to 3.6V 2.5 6.9 VCC= 4.5V to 5.5V 1.7 5.2 VCC= 2.3V to 2.7V TA = 25°C VCC = 2.5V tPZL tPZH OUTPUT ENABLE TURN NOTIME: A TO BN See test circuit diagrams 1 and 2. VI = 2VCC for TPZL, VI = 0V for tPZH VCC = 3.3V VCC = 3.0V to 3.6V VCC = 4.5V to 5.5V Units 0.3 VCC= 1.65V to 1.95V diagrams 1 & 2. See test circuit VI = 2VCC for TPZL, VI = 0V for tPZH Max. 1.2 VCC= 4.5V to 5.5V Output Enable Turn ON Time: A to Bn Typ 24 TA = 25°C & –40 to 85°C 14 7.6 5.7 ns GS4157/4157B Low-Voltage, 2.8Ω SPDT Analog Switch tPLZ tPHZ Output Disable Turn OFF Time: A to Bn VCC = 1.65V to 1.95V See test circuit diagrams 1 and 2. VI = 2VCC for TPZL, VI = 0V for tPZH 3 12.5 2 7 VCC = 3.0V to 3.6V 1.5 5 VCC = 4.5V to 5.5V 0.8 3.5 VCC = 2.3V to 2.7V TA = 25°C VCC = 2.5V tPLZ tPHZ Output Disable Turn OFF Time: A to Bn See test circuit diagrams 1 and 2. VI = 2VCC for TPZL, VI = 0V for tPZH VCC = 3.3V VCC = 3.0V to 3.6V 13 7.5 TA = –40 to 85°C 5.3 VCC = 4.5V to 5.5V 3.8 VCC = 2.5V tBM Break Before Make Time See test circuit diagram 9.(9) VCC = 3.3V VCC = 3.0V to 3.6V 0.5 TA = 25°C & –40 to 85°C VCC = 4.5V to 5.5V Q OIRR Charge Injection CL = 0.1nF, VGEN = 0V, RGEN = 0Ω. See test circuit 4. Off Isolation RL = 50Ω, VGEN = 0V, RGEN = 0Ω. See test circuit 5. (11) VCC = 1.65V to 5.5V 0.5 0.5 0.5 VCC = 5.0V 7 TA = 25°C VCC = 3.3V pC 3 TA = 25°C –57 dB XTALK Crosstalk Isolation See test circuit 6. VCC = 1.65V to 5.5V TA = 25°C –54 f3dB –3dB Bandwidth See test circuit 9 VCC = 1.65V to 5.5V TA = 25°C 300 MHz Note 6: Guaranteed by design Note 7: Guaranteed by design but not production tested. The device contributes no other propagation delay other than the RC delay of the switch ON resistance and the 50pF load capacitance, whne driven by an ideal voltage source with zero output impedance. Note 8: Off Isolation = 20 Log10 [ VA / VBn ] and is measured in dB. Note 9: TA = 25°C, f = 1MHz. Capacitance is characterized but not tested in production. GS4157/4157B Low-Voltage, 2.8Ω SPDT Analog Switch TEST CIRCUITS AND TIMING DIAGRAMS GS4157/4157B ISl=lln!:ill..::! Low-Voltage, 2.8Ω SPDT Analog Switch VouT I 100pF 0 = (t.VOUT)(CL) Figure 4. Charge Injection Test vee Vee Logic Input ov or BJH 5日Q Figure 5. Off Isolation Figme 6. Crosstalk Vee Vee f = 1 MHz Figure 7. Channel Off Capacitance Figure 8. Channel On Capacitance Vee Vee av 。rVee A Logic Input GND Figure 9. Bandwidth E同1ns11.卫 ←__,,一飞_____!::::三T工二丘之= 一 www.gainsll;而币三J 吨= GS4157/4157B Low-Voltage, 2.8Ω SPDT Analog Switch Packaging Mechanical: 6-Pin SC70 (C) Packaging Mechanical: 6-Pin TDFN
GS4157-CR
物料型号:GS4157/4157B

器件简介: GS4157/4157B是一款低电压、高带宽的单刀双掷(SPDT)CMOS模拟开关,适用于模拟开关或低延迟总线开关。它在1.65V至5.5V的宽电源电压范围内工作,具有低导通电阻和高关断隔离特性。

引脚分配: - S:逻辑控制输入 - Vcc:正电源 - A:公共输出/数据端口 - B0:数据端口(常闭) - GND:地 - B1:数据端口

参数特性: - CMOS技术,适用于总线和模拟应用 - 低导通电阻:在2.7V时为3欧姆 - 宽电源电压范围:1.65V至5.5V - 轨到轨信号范围 - 控制输入过压容限:至少5.5V - 高关断隔离:在10MHz时为57dB - 交叉谈话抑制:在10MHz时为54dB,减少信号失真 - 先断后接开关,防止信号干扰 - 高带宽:300MHz - 扩展工业温度范围:-40°C至85°C

功能详解: 逻辑功能表显示了控制输入S的逻辑功能,当S为0时,B0与A连接;当S为1时,B1与A连接。

应用信息: 适用于手机、PDA、便携式仪器、电池供电通信、计算机外围设备等。

封装信息: - GS4157EXT-TR:6引脚SC70封装,温度范围-40°C至+85°C,顶标为ABG - GS4157BEXT-TR:6引脚TDFN封装,温度范围40°C至+85°C,顶标为ABG
GS4157-CR 价格&库存

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GS4157-CR
    •  国内价格
    • 5+0.25500
    • 20+0.23250
    • 100+0.21000
    • 500+0.18750
    • 1000+0.17700
    • 2000+0.16950

    库存:0