GS2019-18TR

GS2019 300mA, Low Dropout,Linear Regulators GENERAL DESCRIPTION FEATURES The GS2019 series low-power, low-noise, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input voltage. They are the perfect choice for low voltage, low power applications. A low ground current makes this part attractive for battery operated power systems. The GS2019 series also offer ultra-low dropout voltage to prolong battery life in portable electronics. Systems requiring a quiet voltage sources, such as RF applications, will benefit from the GS2019 series ultra-low output noise (30uVRMS) and high PSRR. An external noise bypass capacitor connected to the device’s BP pin can further reduce the noise level. Low Output Noise Low Dropout Voltage Thermal-Overload Protection Output Current Limit High PSRR(74dB at 1kHz) 10nA Logic-Controlled Shutdown Available in Multiple output Voltage Versions Fixed Outputs of 1.2V, 1.5V, 1.8V, 2.5V, 2.8V, 2.85V, 3.0V and 3.3V Adjustable Output from 1.2V to 5.0V -40°C to 85°C Operating Temperature Range Available in Green SC70-5 and SOT-23-5 Packages The output voltage is preset to voltages in the range of 1.2V to 5.0V. Other features include a 10nA logic-controlled shutdown mode, foldback current limit and thermal shutdown protection. The GS2019 is available in Green SOT-23-5 and SC70-5 packages. It operates over an ambient temperature range of -40°C to +85°C. APPLICATIONS Cellular Telephones Cordless Telephones PCMCIA Cards Modems MP3 Player Hand-Held Instruments Portable/Battery-Powered Equipment ORDERING INFORMATION Order Number Package Type Temperature Range Marking QTY/Reel GS2019-TR SOT-23-5 -40°C to +85°C LKXX1 3000 GS2019-CR SC70-5 -40°C to +85°C LKXX1 3000 NOTE 1:XX: voltage version (12:1.2V, 15:1.5V, 18:1.8V, 25:2.5V, 28:2.8V, 285:2.85V, 30:3.0V, 33:3.3V, AJ:Adjustable) GS2019 ABSOLUTE MAXIMUM RATINGS CAUTION IN to GND.......................................................-0.3V to 6V This integrated circuit can be damaged by ESD if you don’t EN to GNDEEEEE....................................-0.3V to VIN pay attention to ESD protection. Broadchip recommends OUT, BP/FB to GND...........................-0.3V to (VIN+0.3V) that all integrated circuits be handled with appropriate Output Short-Circuit Duration.................................Infinite precautions. Failure to observe proper handling and Power Dissipation, PD@TA=25 installation procedures can cause damage. ESD damage ℃ SOT-23-5..................................................................0.4W can range from subtle performance degradation to SC70-5.....................................................................0.3W complete device failure. Precision integrated circuits may Package Thermal Resistance be more susceptible to damage because very small SOT-23-5, θJA......................................................260 /W parametric changes could cause the device not to meet its ℃ SC70-5, θ ..........................................................330℃/W Junction Temperature..............................................150℃ Operating Temperature Range.................-40℃ to +85℃ Storage Temperature Range....................-65℃ to 150℃ Lead Temperature (Soldering, 10 sec).....................260℃ JA ESD Susceptibility HBM.....................................................................2000V MM.........................................................................200V NOTE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. published specifications. Broadchip reserves the right to make any change in circuit design, specification or other related things if necessary without notice at any time. Please contact Broadchip sales office to get the latest datasheet. GS2019 PIN CONFIGURATION SOT23-5/SC70-5 TOP VIEW 1 GND 2 EN 3 5 OUT 4 BP/FB MARKING IN PIN DESCRIPTION PIN NAME 1 IN 2 GND 3 EN Shutdown Input. A logic low reduces the supply current to 10nA. Connect to IN for normal operation. BP Reference-Noise Bypass (fixed voltage version only). Bypass with a low-leakage 0.01uF ceramic capacitor for reduced noise at the output. FB Adjustable Voltage Version Only. This is used to set the output voltage of the device. 4 5 OUT FUNCTION Regulator Input. Supply voltage can range from 2.5V to 5.5V. Bypass with a 1uF capacitor to GND. Ground. Regulator Output. GS2019 ELECTRICAL CHARACTERISTICS ℃ to +85℃, unless otherwise specified.) (VIN= VOUT(NOMINAL)+0.5V(1), Full = -40 PARAMETER SYM Input Voltage CONDITIONS VIN (1) Output Voltage Accuracy IOUT=0.1mA Maximum Output Current Current Limit ILIM Ground Pin Current IQ Dropout Voltage(2) Line Regulation Load Regulation Output Voltage Noise Power Supply Rejection Ratio ΔV ΔV LNR LDR MIN MAX UNITS 2.5 5.5 V -2.5 2.5 % SOT-23-5 300 VOUT=1.2V,1.5V,1.8V, SC70-5 150 VOUT>2V, SC70-5 250 mA 800 No load, EN=2V 100 mA 200 IOUT=1mA 0.9 IOUT=300mA 270 400 VIN=2.5V or (VOUT+0.5V) to 5.5V, IOUT=1mA 0.02 0.05 IOUT=0.1mA to 300mA, COUT=1uF, VOUT>2V 0.002 0.005 IOUT=0.1mA to 300mA, COUT=1uF, VOUT 2V 0.004 0.008 uA mV %/V %/mA ≤ en TYP f=10Hz to 100kHz, CBP=0.01uF, COUT=10uF 30 f= CBP=0.1uF, PSRR ILOAD=50mA, COUT=1uF, 217Hz VIN=VOUT+1V f=1kHz uVRMS 77 dB 74 SHUTDWON(3) EN Input Threshold VIH VIL VIN=2.5V to 5.5V, VEN=-0.3V to VIN 1.5 0.3 EN Input Bias Current IB(SHDN) EN=0V or EN=5.5V 0.01 Shutdown Supply Current IQ(SHDN) EN=0.4V 0.01 uA 30 us 150 °C 15 °C CBP=0.01uF, COUT=1uF, No Load Shutdown Exit Delay(4) 1 V uA THERMAL PROTECTION Thermal Shutdown Temperature Thermal Shutdown Hysteresis TSHDN ΔT SHDN NOTES: 1. VIN = VOUT (NOMINAL) + 0.5V or 2.5V, whichever is greater. 2. The dropout voltage is defined as VIN - VOUT, when VOUT is 100mV below the value of VOUT for VIN = VOUT + 0.5V. (Only applicable for VOUT = +2.5V to +5.0V.) 3. VEN = -0.3V to VIN 4. Time needed for VOUT to reach 90% of final value. GS2019 TYPICAL APPLICATION CIRCUIT CBP(nF) Shutdown Exit Delay(us) VOUT=2.8V, VIN=3.3V, EN=0V to 2V ILOAD=50mA ILOAD=150mA ILOAD=300mA PSRR(dB) at 217Hz VOUT=2.8V, VIN=VOUT+1V ILOAD=50mA ILOAD=150mA ILOAD=300mA None 21.5 21.5 21 71.1 64.4 55 0.001 21.5 21.5 22 71.1 64.6 55.1 0.01 22 22.5 22.5 71.6 64.7 55.2 0.1 22.5 23 23 71.7 64.8 55.4 1 25 27 28.5 72.1 65.2 55.9 10 30 35 39 74.3 68.8 59.6 100 265 280 300 77 73.7 63.1 GS2019 TYPICAL APPLICATION CIRCUIT Standard 1% Resistor Values for Common Output Voltages of Adjustable Voltage Version VOUT (V) R1 (kΩ) R2 (kΩ) 1.2 0 63.4 1.5 10.5 42.2 1.8 34 63.4 2.8 84.5 63.4 3.0 63.4 42.2 3.3 73.2 42.2 3.6 84.5 42.2 4.2 105 42.2 NOTE: VOUT = (R1 + R2)/ R2 × 1.207 GS2019 APPLICATION NOTE When LDO is used in handheld products, attention must be paid to voltage spikes which could damage GS2019. In such applications, voltage spikes will be generated at charger interface and VBUS pin of USB interface when charger adapters and USB equipments are hot-plugged. Besides this, handheld products will be tested on the production line without battery. Test engineer will apply power from the connector pin which connects with positive pole of the battery. When external power supply is turned on suddenly, the voltage spikes will be generated at the battery connector. The voltage spikes will be very high, and it always exceeds the absolute maximum input voltage (6.0V) of LDO. In order to get robust design, design engineer needs to clear up this voltage spike. Zener diode is a cheap and effective solution to eliminate such voltage spike. For example, BZM55B5V6 is a 5.6V small package Zener diode which can be used to remove voltage spikes in cell phone designs. The schematic is shown below. Bypass Capacitor and Low Noise Connecting a 22nF between the BP pin and GND pin significantly reduces noise on the regulator output, it is critical that the capacitor connection between the BP pin and GND pin be direct and PCB traces should be as short as possible. There is a relationship between the bypass capacitor value and the LDO regulator turn on time. DC leakage on this pin can affect the LDO regulator output noise and voltage regulation performance. Enable Function The GS2019 features an LDO regulator en-able/disable function. To assure the LDO regulator will switch on; the EN turn on control level must be greater than 1.2 volts. The LDO regulator will go into the shutdown mode when the voltage on the EN pin falls below 0.4 volts. For to protect the system, the GS2019 have a quick discharge function. If the enable function is not needed in a specific application, it may be tied to VIN to keep the LDO regulator in a continuously on state. GS2019 Programming the GS2019 Adjustable LDO regulator The output voltage of the GS2019 adjustable regulator is programmed using an external resistor divider as show in Figure as below. The output voltage is calculated using equation as below: R1   VOUT = VREF × 1 +   R2  Where: VREF=1.207V typ (the internal reference voltage) Resistors R1 and R2 should be chosen for approximately 50uA divider current. Lower value resistors can be used for improved noise performance, but the solution consumes more power. Higher resistor values should be avoided as leakage current into/out of FB across R1/R2 creates an offset voltage that artificially increases/decreases the feedback voltage and thus erroneously decrease/increases VOUT. Thermal Considerations Thermal protection limits power dissipation in GS2019. When the operation junction temperature exceeds 150°C, the OTP circuit starts the thermal shutdown function turn the pass element off. The pass element turns on again after the junction temperature cools by 15°C. For continue operation, do not exceed absolute maximum operation junction temperature 125°C. The power dissipation definition in device is: PD = (VIN−VOUT) ×IOUT + VIN×IQ The maximum power dissipation depends on the thermal resistance of IC package, PCB layout, the rate of surroundings airflow and temperature difference between junction to ambient. The maximum power dissipation can be calculated by following formula ： PD(MAX) = ( TJ(MAX) − TA ) /θJA Where TJ(MAX) is the maximum operation junction temperature 125°C, TA is the ambient temperature and the θJA is the junction to ambient thermal resistance. For recommended operating conditions specification of GS2019, where TJ(MAX) is the maximum junction temperature of the die (125°C) and TA is the maximum ambient temperature. The junction to ambient thermal resistance (θJA is layout dependent) for SOT-23-5 package is 250°C/W, SC-70-5 package is 333°C/W, on standard JEDEC 51-3 thermal test board. The maximum power dissipation at TA= 25°C can be calculated by following formula: PD(MAX) = (125°C−25°C)/333 = 300mW (SC-70-5) PD(MAX) = (125°C−25°C)/250 = 400mW (SOT-23-5) GS2019 The maximum power dissipation depends on operating ambient temperature for fixed TJ(MAX) and thermal resistance θJA. It is also useful to calculate the junction of temperature of the GS2019 under a set of specific conditions. In this example let the Input voltage VIN=3.3V, the output current Io=300mA and the case temperature TA=40°C measured by a thermal couple during operation. The power dissipation for the Vo=2.8V version of the GS2019 can be calculated as: PD = (3.3V−2.8V) ×300mA+3.6V×100uA =150mW And the junction temperature, TJ, can be calculated as follows: TJ=TA+PD×θJA=40°C+0.15W×250°C/W =40°C+37.5°C=77.5°C