UMW AO3402A

UMW R UMW AO3402A UMW AO3402A N-Channel MOSFET V(BR)DSS ID RDS(on)MAX SOT-23  55 mΩ@10V  4A  70 mΩ@4.5V 30V 110 mΩ@2.5V  DESCRIPTION 1. GATE The 3402 uses advanced trench technology to provide excellent 2. SOURCE 3. DRAIN RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a load switch or in PWM application. FEATURES z Lead free product is acquired z Surface mount package APPLICATION z Load Switch and in PWM applications MARKING Equivalent Circuit A29T Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current ID 4 A Pulsed Drain Current (note 1) IDM 15 A Power Dissipation PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance from Junction to Ambient (note 2) www.umw-ic.com 1 友台半导体有限公司 UMW R UMW AO3402A Ta =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =250µA Zero gate voltage drain current IDSS VDS =24V,VGS = 0V Gate-body leakage current IGSS VGS =±12V, VDS = 0V VGS(th) VDS =VGS, ID =250µA Gate threshold voltage (note 3) Drain-source on-resistance (note 3) RDS(on) 30 V 1 µA 100 nA 1.4 V VGS =10V, ID =4A 55 mΩ VGS =4.5V, ID =3A 70 mΩ VGS =2.5V, ID =2A 110 mΩ Forward transconductance (note 3) gFS VDS =15V, ID =4A Diode forward voltage (note 3) VSD IS=1A, VGS = 0V 0.6 8 S 1 V DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg VDS =15V,VGS =0V,f =1MHz VDS =0V,VGS =0V,f =1MHz 390 pF 54.5 pF 41 Pf 3 Ω 3.3 ns SWITCHING CHARACTERISTICS (note 4) Turn-on delay time Turn-on rise time Turn-off delay time td(on) tr VGS=10V,VDS=15V, 1 ns td(off) RL=3.75Ω,RGEN=6Ω 21.7 ns Turn-off fall time tf 2.1 ns Total gate charge Qg 4.34 nC Gate-source Charge Qgs 0.6 nC Gate-drain Charge Qgd 1.38 nC 1.2 ns 6.3 nC Body diode reverse recovery time Body diode reverse recovery charge t. Qrr VDS =15V,VGS =4.5V,ID =4A IF=4A,dI/dt=100A/µs Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤80µs, Duty Cycle≤0.5%. 4. Guaranteed by design, not subject to producting. www.umw-ic.com 2 友台半导体有限公司