UMW BSS84

UMW R UMW BSS84 P-Channel Enhancement Mode MOSFET SOT–23 ■ Features ● VDS (V) = -50V ● ID = -0.13 A ● RDS(ON) ≤ 10Ω (VGS = -5V) MARKING 1. GATE 2. SOURCE 3. DRAIN P. D Y ■ Absolute Maximum Ratings Ta = 25℃ unless otherwise specified Symbol Rating Unit Drain-Source Voltage Parameter VDSS -50 V Gate-Source Voltage VGSS ±20 V Drain Current * – Continuous -130 ID – Pulsed mA -520 Total Power Dissipation * Pd Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range 300 mW RθJA 417 ℃/W Tj, TSTG -55 to +150 ℃ * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; ■ Electrical Characteristics Ta = 25℃ unless otherwise specified Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage IGSS Test conditons VGS = 0V, ID = -250μA Min Typ -50 Static Drain-Source On-Resistance VGS(th) VDS = -50V, VGS = 0V, TJ = 25℃ RDS (ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = ±20V, VDS = 0V VDS = VGS, ID = -1mA -0.8 VGS = -5V, ID = -100mA VDS = -25V, ID = -0.1A Unit V VDS = -50V, VGS = 0V, TJ = 125℃ Gate Threshold Voltage Max -15 μA -60 μA ±10 nA -2.0 V 10 Ω 0.05 S VDS = -25V, VGS = 0V,f = 1.0MHz 45 pF 25 pF 12 pF Turn-On Delay Time tD(ON) VDD = -30V, ID = -0.27A, 10 ns Turn-Off Delay Time tD(OFF) RGEN = 50Ω, VGS = -10V 18 ns www.umw-ic.com 1 友台半导体有限公司