UMW SI2305A

UMW R UMW SI2305A P-Channel MOSFET SOT–23 ■ Features ● VDS (V) = -20V ● RDS(ON)＜0.065 Ω (VGS = -4.5V) ● RDS(ON)＜0.100 Ω (VGS = -2.5V) ● RDS(ON)＜0.250 Ω (VGS = -1.8V) 1. GATE 2. SOURCE 3. DRAIN MARKING D A50T G S ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Drain-source voltage Parameter VDS -20 V Gate-source voltage VGS ±12 V ID -4.2 -3.4 A IDM -10 A PD 1.38 0.8 W RθJA 90 ℃/W Tj,Tstg -55 to +150 ℃ Continuous drain current -- TA=25℃ TA=70℃ Pulsed drain current Power dissipation -- TA=25℃ TA=70℃ Thermal Resistance.Junction-to-Ambient Operating junction and storage temperature range www.umw-ic.com 1 友台半导体有限公司 UMW R UMW SI2305A ■ Electrical Characteristics Ta = 25℃ Parameter Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-body leakage Drain-source on-state resistance On-state drain current Symbol VDSS VGS(th) IDSS IGSS rDS(on) ID(on) Forward transconductance gfs Input capacitance * Ciss Output capacitance * Coss Reverse transfer capacitance * Crss Total gate charge * Qg Testconditons VGS = 0 V, ID = -10 μA VDS = VGS, ID = -250 μA Min Typ -20 V VDS = -20 V , VGS = 0 V -1 VDS = -16 V , VGS = 0 V, TJ = 55 ℃ -10 VDS = 0 V, VGS = ±12 V ±100 VGS = -4.5 V, ID = -4.2 A 0.065 VGS = -2.5 V, ID = -2.0 A 0.100 VGS = -1.8 V, ID = -1.0 A 0.250 VDS ≤ -5 V, VGS = -4.5 V -6 VDS ≤ -5 V, VGS = -2.5 V -3 VDS = -5 V, ID = -2.8 A 9 10.6 VDS = -16V ,VGS = -4.5 V , ID= -4.2 A Turn-on Delay time td(on) 5.9 Continuous source current (diode conduction) * Diode forward voltage VDD =-15V ,RL = 3.6Ω , ID = -4.2A ,V GEN =- 10V , RG = 6Ω tf nC 2.32 3.6 ns 32.4 2.6 IS VSD pF 126 3.68 Turn-off Fall time Ω S 167 Qgd tr nA 740 VDS = -15V ,VGS = 0 , f = 1 MHz Gate-drain charge * td(off) μA A Qgs Turn-on Reise time Unit V -0.5 Gate-source charge * Turn-off Dealy time Max -1.6 IS = -1.2 A, VGS = 0 V A -1.2 V * Pulse test: PW ≤ 300 μs duty cycle ≤ 2%. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW SI2305A ■ Typical Characteristics Output Characteristics Transfer Characteristics 12 12 VGS = 4.5 thru 2.5 V TC = –55C 2V 10 10 I D – Drain Current (A) I D – Drain Current (A) 25C 8 6 1.5 V 4 2 8 125C 6 4 2 1, 0.5 V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 0.5 VDS – Drain-to-Source Voltage (V) 1.0 2.5 Capacitance On-Resistance vs. Drain Current 2000 0.25 1600 C – Capacitance (pF) r DS(on) – On-Resistance (
) 2.0 VGS – Gate-to-Source Voltage (V) 0.30 0.20 0.15 VGS = 1.8 V 0.10 VGS = 2.5 V Ciss 1200 800 Coss 400 0.05 Crss VGS = 4.5 V 0 0 0 2 4 6 10 8 0 12 2 6 4 8 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 1.4 5 VDS = 4 V ID = 3.5 A 4 r DS(on) – On-Resistance (
) (Normalized) V GS – Gate-to-Source Voltage (V) 1.5 3 2 1 0 0 2 4 6 8 1.2 1.0 0.8 0.6 –50 10 Qg – Total Gate Charge (nC) www.umw-ic.com VGS = 4.5 V ID = 3.5 A –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) 3 友台半导体有限公司 UMW R UMW SI2305A Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.5 30 TJ = 150C TJ = 25C 1 0.4 r DS(on) – On-Resistance ( W ) I S – Source Current (A) 10 0.3 0.2 ID = 3.5 A 0.1 0 0.1 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 VSD – Source-to-Drain Voltage (V) 2 6 8 VGS – Gate-to-Source Voltage (V) Single Pulse Power Threshold Voltage 0.4 12 ID = 250 mA 0.3 10 8 0.2 Power (W) V GS(th) Variance (V) 4 0.1 6 0.0 4 TA = 25C 2 –0.1 –0.2 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 TJ – Temperature (C) 10 100 500 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 130C/W 0.02 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 100 500 Square Wave Pulse Duration (sec) www.umw-ic.com 4 友台半导体有限公司