UMW SI2307A

UMW R UMW SI2307A P-Channel Enhancement MOSFET SOT–23 ■ Features ● VDS (V) =-30V ● ID =-3.0A (VGS =-10V) ● RDS(ON) ＜ 80mΩ (VGS =-10V) 1. GATE ● RDS(ON) ＜ 140mΩ (VGS =-4.5V) 2. SOURCE 3. DRAIN ■ Marking G 1 S 2 3 A79T D ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Drain-Source Voltage VDS -30 Gate-Source Voltage VGS ±20 Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation ID IDM Ta = 25℃ Ta = 70℃ PD -2.5 0.8 100 TJ 150 Junction and Storage Temperature Range Tstg -55 to 150 www.umw-ic.com 1 A -12 1.25 RthJA t≤10 sec V -3 Junction Temperature Thermal Resistance.Junction- to-Ambient Unit W ℃/W ℃ 友台半导体有限公司 UMW R UMW SI2307A ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance *1 On state drain current *1 VGS(th) RDS(On) ID(ON) Forward Transconductance *1 gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate Source Charge Qgs Test Conditions ID=-250u A,VGS=0V Min Typ -30 -1 VDS=-24V, VGS=0V, TJ=55℃ -10 VDS=0V, VGS=±20V VDS=VGS ID=-250μA -1.0 103 140 -6 4.5 VGS=0V, VDS=-15V, f=1MHz Diode Forward Voltage 75 10 VGS=-15V, VDS=-15V, ID=-3A VGS=-10V, VDS=-15V, RL=15Ω,RGEN=6Ω ID=-1.0A tf IS VSD pF 126 IS=-1.25A,VGS=0 15 nC 1.9 2 Maximum Body-Diode Continuous Current S 565 10 Turn-Off Fall Time mΩ A Qgd tr V VGS=-4.5V, ID=-2.5A td(on) td(off) -3.0 80 Gate Drain Charge Turn-Off DelayTime nA 64 VDS=-10V, ID=-3A μA ±100 VGS=-10V, ID=-3A VGS=-10V, VDS=-5V Unit V VDS=-24V, VGS=0V Turn-On DelayTime Turn-On Rise Time Max 20 9 20 27 50 7 ns 16 -1.25 A -1.2 V *1Pulse test: PW ≤ 300us duty cycle ≤ 2%. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW SI2307A ■ Typical Characterisitics Output Characteristics 12 Transfer Characteristics 。 T = –55 C 12 C VGS = 10 thru 5 V 25。 C 10 4V 8 I D – Drain Current (A) I D – Drain Current (A) 10 6 4 3V 2 8 。 125 C 6 4 2 0 0 0 2 4 6 8 10 1 0 VDS – Drain-to-Source Voltage (V) 3 4 5 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.6 2 Capacitance 800 C – Capacitance (pF) r DS(on) – On-Resistance ( Ω ) 700 0.4 0.2 VGS = 4.5 V Ciss 600 500 400 300 200 Coss 100 VGS = 10 V 0 0 2 4 6 8 Crss 0 0 10 ID – Drain Current (A) 1.6 VDS = 15 V ID = 3 A 18 24 30 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3 A 8 1.4 r DS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 12 VDS – Drain-to-Source Voltage (V) Gate Charge 10 6 6 4 2 0 0 2 4 6 8 1.0 0.8 0.6 –50 10 0 50 100 150 C) TJ – Junction Temperature (。 Qg – Total Gate Charge (nC) www.umw-ic.com 1.2 3 友台半导体有限公司 UMW R UMW SI2307A ■ Typical Characterisitics Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.0 TJ = 150。C 1.0 0.8 r DS(on) – On-Resistance ( Ω ) I S – Source Current (A) 10.0 TJ = 25。C 0.6 ID = –3 A 0.4 0.2 0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 VSD – Source-to-Drain Voltage (V) 8 10 10 8 Power (W) 0.2 ID = 250 A 0.0 6 TA = 25。C Single Pulse 4 –0.2 2 –0.4 –50 . –25 0 25 50 75 100 125 0 150 0.01 0.1 1 TJ – Temperature (。 C) 1.00 10 100 500 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 6 Single Pulse Power 12 0.4 V GS(th) Variance (V) 4 VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.6 2 Duty Cycle = 0.5 0.2 Notes: 0.1 0.10 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 。 2. Per Unit Base = RthJA = 130 C/W 0.02 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 10 100 500 Square Wave Pulse Duration (sec) www.umw-ic.com 4 友台半导体有限公司