UMW SI2310A

UMW R UMW SI2310A N-Channel Power MOSFET ■ Features SOT–23 ● Simple Drive Requirement ● Small Package Outline ● Surface Mount Device 1. GATE 2. SOURCE MARKING 3. DRAIN D G MS10 S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Symbol Rating Unit VD S 60 V VGS ±20 V TA=25 ℃ ID TA=70℃ Pulsed Drain Current * Power Dissipation TA=25℃ Junction and Storage Temperature Range A I DM 10 PD 1.38 W 0.01 W/℃ 90 ℃/W -55 to 150 ℃ Linear Derating Factor Thermal Resistance.Junction-to-ambient 3 2.3 RthJa TJ , TSTG * 2.Pulse width ≤300us , duty cycle≤ 2%. www.umw-ic.com 1 友台半导体有限公司 UMW R UMW SI2310A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current Testconditons ID =250μA, VGS=0V 60 25 VGS(th) V DS =V GS ID=-250μA Static Drain-Source On-Resistance RDS(ON) 1 nA 3 V 90 V GS =4.5V, I D=2A 120 5 Input Capacitance Ciss Output Capacitance C oss 490 Reverse Transfer Capacitance Crss 40 Total Gate Charge Qg 6 Gate Source Charge Q gs Gate Drain Charge Q gd 3 Turn-On DelayTime tD(on) 6 Turn-On Rise Time tr Turn-Off DelayTime tD(off) V GS =0V, VD S=25V, f=1MHz VDS=48V, ID=3A ,VGS=4.5V V GS =10V, V DS=30V,ID=1A RD=30 Ω,RG EN=3.3Ω μA ±100 V GS =10V, ID=3A V DS =5V, I D=3A Unit V 10 Gate Threshold Voltage mΩ S 780 55 pF 10 1.6 nC 5 ns 16 Turn-Off Fall Time tf Body Diode Reverse Recovery Time t rr IS =3A,dI/dt=100A/μs 25 Body Diode Reverse Recovery Charge Q rr IS =3A, dI /dt=100A/μs 26 Diode Forward Voltage V SD IS =1.2A,V GS =0V www.umw-ic.com Max V DS =48, V GS =0V ,TJ=70℃ V DS =0V, V GS=±20V g FS Typ V DS =60V, VG S=0V IGSS Forward Transconductance Min 3 2 nC 1.2 V 友台半导体有限公司 UMW R UMW SI2310A 10 10 8 ID , Drain Current (A) ID , Drain Current (A) 8 10V 7.0V 5.0V 4.5V o T A = 150 C 10V 7.0V 5.0V 4.5V T A =25 o C 6 V G = 3.0 V 4 2 6 V G = 3.0 V 4 2 0 0 0 1 3 2 4 0 5 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 105 2.0 ID=2A 99 ID=3A V G =10V 1.8 o T A =25 C Normalized R DS(ON) RDS(ON) (mΩ ) 1.6 93 87 1.4 1.2 1.0 81 0.8 0.6 75 2 6 4 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 3 Normalized VGS(th) (V) 1.2 IS(A) 2 o o T j =150 C T j =25 C 1 1.0 0.8 0.6 0.4 0 0 0.2 0.4 0.6 0.8 1 -50 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of 50 100 150 Fig 6. Gate Threshold Voltage v.s. Junction Temperature Reverse Diode www.umw-ic.com 0 T j , Junction Temperature ( o C) 3 友台半导体有限公司 UMW R UMW SI2310A f=1.0MHz 1000 ID=3A 12 C iss V DS = 30 V V DS =38V V DS =48V 10 C (pF) VGS , Gate to Source Voltage (V) 14 8 100 6 C oss C rss 4 2 10 0 0 3 9 6 12 1 15 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100.000 Normalized Thermal Response (Rthja) Duty factor=0.5 10.000 100us 1.000 ID (A) 1ms 10ms 0.100 100ms 1s DC T A =25 o C Single Pulse 0.010 0.2 0.1 0.1 0.05 PDM 0.01 t 0.01 T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja = 270℃ ℃ /W 0.001 0.0001 0.001 0.1 1 10 100 0.01 0.1 1 10 100 1000 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area www.umw-ic.com 0.001 1000 Fig 10. Effective Transient Thermal Impedance 4 友台半导体有限公司