UMW SI2312A

UMW R UMW SI2312A ■ Features SOT–23 ● VDS (V) = 20V ● ID = 4.9 A (VGS =4.5V) ● RDS(ON) ＜ 33mΩ (VGS = 4.5V) ● RDS(ON) ＜ 40mΩ (VGS = 2.5V) ● RDS(ON) ＜ 51mΩ (VGS = 1.8V) 1. GATE MARKING 2. SOURCE 3. DRAIN G A12T 1 3 S D 2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Pulsed Drain Current *1 Ta=25℃ ID Ta=70℃ *2 Avalanche Current *2 Single Avalanche Energy Power Dissipation *1 L=0.1mH Ta=25℃ Thermal Resistance.Junction- to-Ambient *1 t≤5 sec Steady State Thermal Resistance.Junction-to-Foot Junction Temperature Storage Temperature Range 3.77 3.9 3.0 IDM 15 IAS 15 PD Ta=70℃ RthJA V 4.9 11.25 EAS Unit A mJ 1.25 0.75 0.8 0.48 W 100 166 ℃/W RthJF 50 TJ 150 Tstg -55 to 150 ℃ *1 Surface Mounted on 1” x 1” FR4 Board. *2 Pulse width limited by maximum junction temperature www.umw-ic.com 1 友台半导体有限公司 UMW R UMW SI2312A ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current Gate Threshold Voltage On-State Drain Current *1 Static Drain-Source On-Resistance *1 IGSS VGS(th) ID(on) RDS(On) Forward Transconductance *1 gFS Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Test Conditions ID=250μA, VGS=0V Min Typ Max 20 Unit V VDS=20V, VGS=0V 1 VDS=20V, VGS=0V, Ta=70℃ 75 VDS=0V, VGS=±8V μA ±100 nA 0.65 0.85 V VGS=4.5V, ID=5.0A 27 33 VGS=2.5V, ID=4.5A 33 40 VGS=1.8V, ID=4.0A 42 51 VDS=VGS , ID=250μA VDS ≥ 10 V, VGS = 4.5 V VDS=15V, ID=5.0A 0.45 15 A 40 11.2 VGS=4.5V, VDS=10V, ID=5.0A mΩ S 14 nC 1.4 2.2 ID=1.0A, VDS=10V, ,V GEN=4.5V RL=10Ω,RG=6Ω IF= 1.0A, dI/dt= 100A/μs IS=1.0A,VGS=0V 15 25 40 60 48 70 31 45 13 0.8 ns 25 1.0 A 1.2 V *1 Pulse test: PW ≤ 300us duty cycle≤ 2%. www.umw-ic.com 2 友台半导体有限公司 UMW R UMW SI2312A ■ Typical Characterisitics Ou t p u t Ch ar ac t er i s t i c s Tr an s f er Ch ar ac t er i s t i c s 15 15 V GS = 4.5 thru 2.0 V Drain Current (A) 12 1.5 V 9 6 ID - ID - Drain Current (A) 12 3 0.5 V 1 V DS 3 25 C 3 0 0.0 4 0.5 Drain-to-Source Voltage (V) V GS 1.0 1.5 2.0 Gate-to-Source Voltage (V) - Capacitance 0.12 0.09 V GS = 1.8 V V GS = 2.5 V 0.06 0.03 0.00 0 3 6 9 12 1200 C iss 900 600 300 V GS = 4.5 V C oss C rss 0 15 0 4 ID - Drain Current (A) 8 V DS Gate Charge - 12 16 20 Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature 8 1.6 V DS = 10 V I D = 5.0 A r DS(on) - On-Resistance ( ) (Normalized) V GS - Gate-to-Source Voltage (V) -55 C 1500 C - Capacitance (pF) ) T C = 125 C On-Resistance vs. Drain Current 0.15 r DS(on) - On-Resistance ( 2 - 6 1.0 V 0 0 9 6 4 2 V GS = 4.5 V I D = 5.0 A 1.4 1.2 1.0 0.8 0 0 4 8 12 16 0.6 -50 20 Qg - Total Gate Charge (nC) www.umw-ic.com -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( C) 3 友台半导体有限公司 R UMW UMW SI2312A ■ Typical Characterisitics S o u rc e -D ra in D io d e F o rw a rd V olta g e O n -R e s is ta n c e v s . G a te -to -S o u rc e V olta g e 0.20 20 10 T J = 150 C r DS(on) - On-Resistance ( I S - Source Current (A) ) I D = 5.0 A 1 T J = 25 C 0.1 0.15 0.10 0.05 0.00 0.01 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 Threshold Voltage 6 8 Single Pulse Power 0.2 12 0.1 10 I D = 250 A -0.0 Power (W) V GS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) -0.1 8 T A = 25 C 6 -0.2 4 -0.3 2 . -0.4 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 T J - Temperature ( C) 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 P DM 0.05 t1 t2 t1 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA= 166 C/W 0.02 3. TJM - TA = P DM Z thJA(t) Single Pulse 4. Surface Mounted 0.01 10 - 4 www.umw-ic.com 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (sec) 4 10 100 600 友台半导体有限公司